Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Tabbal, M.; Said, Ali; Hannoun, E.; Christidis, T.

doi:10.1016/j.apsusc.2007.02.045

Cited by 27 publications

(27 citation statements)

References 59 publications

(92 reference statements)

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“…These changes are accompanied by a modification of the line shape of the signal, which is Gaussian for as-deposited films and becomes Lorentzian for films annealed at 1200 ºC. The Gaussian shape results from bond angle distortions and bond length variations, which describe a disordered amorphous phase, while the Lorentzian shape indicates the presence of more uniform and ordered environment of Si-C bonds [7].…”

Section: Resultsmentioning

confidence: 96%

A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications

Oliveira

Pereyra

Carreño

2010

Phys. Status Solidi (c)

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The investigation of metal contact properties of thermal annealed PECVD n‐type SiC thin films for micro‐electromechanical system (MEMS) is reported. The PECVD SiC films were annealed at 1200 °C during 2 hours to obtain poly 3C‐SiC, which is evidenced by the presence of (111) plane of 3C–SiC crystalline phase in the X‐ray diffraction (XRD) pattern and by strong and narrow Lorentzian SiC stretching peak in the FTIR spectra. Hall Effect measurements at room temperature demonstrate that these annealed phosphorus doped films are n‐type semiconductor with donor concentration of 6 × 1019 cm–3. The studied metals were titanium, aluminum and nickel. The metal to poly‐SiC contact were studied using the TLM technique. The three metals exhibited excellent I‐V linearly and showed ohmic characteristics at room temperature. In the best case, a specific resistance of 6 × 10–4 Ωcm2 was obtained for nickel contacts. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 96%

A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications

Oliveira

Pereyra

Carreño

2010

Phys. Status Solidi (c)

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“…Studies show that the pulse energy and substrate temperature are the main parameters which influence the deposition process [15,16]. In most reports, it has been found that substrate temperature during film growth is the main parameter that influences the crystallinity of films.…”

Section: Pld Of Sic Filmsmentioning

confidence: 99%

Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Venkataramesh

Vasa

2013

ZnO Nanocrystals and Allied Materials

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Silicon carbide (SiC), similar to diamond and other ceramic materials, is a material with excellent functional properties. SiC films based devices can be used for various applications ranging from automobile, aerospace industry, power delivery systems, photovoltaic, and microelectromechanical systems. The growth of bulk single crystals of SiC is difficult, but several techniques, such as chemical vapor deposition (CVD), electron beam CVD (EB-CVD), pulsed laser deposition (PLD), are used to produce SiC thin films for various functional applications. In the PLD technique, high substrate temperature ([600°C) is required to produce crystalline SiC thin films and the onset of the large-scale crystallization has been detected above 800°C. The PLD technique has been extended for SiC film deposition on various substrates, such as Si (100), alkali-free glass materials. A review on PLD of SiC thin film clearly show that it is possible to deposit 3C-SiC (b-SiC) and 4H-SiC (a-SiC) thin films by controlling various process parameters, such as laser fluence and substrate temperature. Recent advances in the PLD technique combined with the surface annealing can improve the characteristics of SiC thin films for photovoltaic and electronic device-related applications.

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“…Due to its high hardness and wear resistance, SiC can be used as reinforcement in different matrices [7,8]. Additionally, amorphous SiC is used in the fabrication of microelectronic and optoelectronic devices [2]. Synthesis of different nanostructured SiC forms such as nanospheres, nanowires, and nanorods have been reported [1,8,9].…”

Section: Introductionmentioning

confidence: 99%

“…Because of its wide band gap, high electron mobility and high thermal conductivity, crystalline SiC is of great importance in manufacturing electronic components and microelectro-mechanical systems (MEMS) [1][2][3][4][5][6]. SiC is also considered as an ideal protective coating for metallic components under severe working environment as a result of its high melting point, high oxidation resistance at high temperature and relatively low thermal coefficient of expansion.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Elgazzar

Abdel‐Rahman

Salem

et al. 2010

Applied Surface Science

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Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Cited by 27 publications

References 59 publications

A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications

A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications

Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

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