Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Elgazzar, Haytham; Abdel‐Rahman, Ehab; Salem, Hanadi G.; Nassar, F. A.

doi:10.1016/j.apsusc.2009.09.047

Cited by 27 publications

(11 citation statements)

References 17 publications

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“…To minimize the number of the droplets, a reduction of the laser repetition rate was also tried by Elgazzar et al [10]. The number of droplets was reduced when the laser repletion rate was reduced from 50 to 25 Hz.…”

Section: Resultsmentioning

confidence: 98%

“…The pulsed laser energy and laser fluence play a significant role in controlling the film thickness. Based on experimental studies reported by Elgazzar et al it was shown that as the KrF laser (248 nm) with a pulse width of 25 ns, pulse repetition rate of 50 Hz and with the laser spot of 2 mm 2 , as the laser fluence increased from 0.5 to 1 J/cm 2 , the thickness of the as deposited SiC film also increased from 50 to 170 nm [10]. In the study, the laser fluence values used were much lower than those used in similar PLD elsewhere and the target-to-substrate distance of 33 mm was also less.…”

Section: Experimental Studiesmentioning

confidence: 93%

“…PLD technique can also be used to achieve composite materials in several ways, which include the ablation of composite target material, deposition in a reactive gas atmosphere, or by using two or more targets. Different research groups have demonstrated the PLD technique for SiC thin film deposition [9][10][11][12][13][14].…”

Section: Physical Vapor Deposition Techniquesmentioning

confidence: 99%

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Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Venkataramesh

Vasa

2013

ZnO Nanocrystals and Allied Materials

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Silicon carbide (SiC), similar to diamond and other ceramic materials, is a material with excellent functional properties. SiC films based devices can be used for various applications ranging from automobile, aerospace industry, power delivery systems, photovoltaic, and microelectromechanical systems. The growth of bulk single crystals of SiC is difficult, but several techniques, such as chemical vapor deposition (CVD), electron beam CVD (EB-CVD), pulsed laser deposition (PLD), are used to produce SiC thin films for various functional applications. In the PLD technique, high substrate temperature ([600°C) is required to produce crystalline SiC thin films and the onset of the large-scale crystallization has been detected above 800°C. The PLD technique has been extended for SiC film deposition on various substrates, such as Si (100), alkali-free glass materials. A review on PLD of SiC thin film clearly show that it is possible to deposit 3C-SiC (b-SiC) and 4H-SiC (a-SiC) thin films by controlling various process parameters, such as laser fluence and substrate temperature. Recent advances in the PLD technique combined with the surface annealing can improve the characteristics of SiC thin films for photovoltaic and electronic device-related applications.

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Section: Resultsmentioning

confidence: 98%

Section: Experimental Studiesmentioning

confidence: 93%

Section: Physical Vapor Deposition Techniquesmentioning

confidence: 99%

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Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Venkataramesh

Vasa

2013

ZnO Nanocrystals and Allied Materials

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“…Siliconcarbide (SiC) coating on the graphite pebble is adopted to prohibit the reaction of graphite with steam and/or air and to increase the intrinsic properties such as high hardness, thermal conductivity, thermal stability and reduced activation. There are many methods to deposit SiC such as using electron beam [9], chemical vapor deposition (CVD) system [10], pulsed laser ablation [11]. Among these, two types of CVD coating methods are adopted for SiC coating on the graphite pebble.…”

Section: Introductionmentioning

confidence: 99%

R&D progress of Korean HCSB TBM

Cho

Ahn

et al. 2012

Fusion Engineering and Design

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“…SiC f /SiC composite is a candidate material of blanket in fusion reactors. Helium Cooled Solid Breeder (HCSB) Test Blanket Module (TBM) is designed to give the simulated performance for DEMO-relevant blanket 1 . Graphite pebble has been considered as a reflector material for neutron irradiation.…”

Section: Introductionmentioning

confidence: 99%

THE EFFECTS ON HEAT TREATMENT OF SIC COATED / GRAPHITE PLATE BY RF SPUTTERING SYSTEM

Moon

Yoon

Murakami

et al. 2012

Int. J. Mod. Phys. Conf. Ser.

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Silicon carbide film was coated by RF sputtering system onto graphite plate substrate. Surface roughness of substrate was polished by wet polishing with sand paper, number of 3000. RF power was 200 W in 0.4 Pa of argon gas. Deposition holding time was 3hours in 600 °C temperature. Specimens were heat treated by 1200, 1400 and 1500 °C for 1 hour to research the effect of heat treatment on SiC coating layer. Atomic Force Microscope (AFM) was used to characterize the surface morphology and the Sq surface roughness. AFM was used to investigate the grain size and roughness of the surface of thin coating film. X-ray diffraction (XRD) was used for detecting the coated SiC thin film by thin film mode. FE-SEM was used to characterize the microstructure of SiC coating film.

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Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Cited by 27 publications

References 17 publications

Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

R&D progress of Korean HCSB TBM

THE EFFECTS ON HEAT TREATMENT OF SIC COATED / GRAPHITE PLATE BY RF SPUTTERING SYSTEM

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