Relation between Raman frequency and triaxial stress in Si for surface and cross-sectional experiments in microelectronics components

Wolf, Ingrid De

doi:10.1063/1.4927133

Cited by 46 publications

(40 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the current configuration, i.e. in back-scattering from a (001) face of silicon, with the incident laser beam polarized parallel to the [100] direction and no polarizer in the scattered beam path, only one (longitudinal optic) component is Raman active and expected to shift due to stress [21]. As expected, no significant peak broadening was detected in this case.…”

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 50%

“…When the coating is transparent, such is the case here, the stress due to the coating/substrate mismatch can be measured in the substrate by this technique and compared with data deduced from analytical or finite element modelling [18,19]. In practice, the silicon crystal deformation results in a frequency shift -accompanied sometimes by a broadening-of the original Raman peak due to the anharmonicity of the lattice vibration [20,21]. The shift in frequency depends on the stress state and the Raman diffusion configuration: an equal shift of the triply degenerate modes -without splitting-is observed in case of a hydrostatic stress whereas a splitting between the singlet and doublet components can occur for a uniaxial, biaxial or more complex stress state [20,21].…”

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 99%

“…In practice, the silicon crystal deformation results in a frequency shift -accompanied sometimes by a broadening-of the original Raman peak due to the anharmonicity of the lattice vibration [20,21]. The shift in frequency depends on the stress state and the Raman diffusion configuration: an equal shift of the triply degenerate modes -without splitting-is observed in case of a hydrostatic stress whereas a splitting between the singlet and doublet components can occur for a uniaxial, biaxial or more complex stress state [20,21]. In the current configuration, i.e.…”

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 99%

See 2 more Smart Citations

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

et al. 2019

View full text Add to dashboard Cite

Stoichiometric silicon nitride films were deposited by low-pressure chemical vapor deposition from the SiHCl3-NH3-H2-Ar system in a hot wall reactor at pressures ranging from 0.3 to 2 kPa. The films are amorphous for deposition temperatures up to 1000 °C and crystalline, in the αform, at 1200 °C and above. A method for evaluating the internal stresses based on the curvature of the silicon substrate wafer and the resulting silicon Raman peak shift was developed. Some amorphous films exhibit high internal tensile stresses that can lead to cracking during deposition depending on the mechanism and effective precursors involved. Residual stresses can thus be reduced and cracking avoided by, in descending order of importance, reducing the concentration of reactive gases through dilution, increasing the deposition temperature and decreasing the total pressure. The effects of these parameters on the intrinsic stresses were related to the amount of residual hydrogen successively incorporated and thermally released during the growth of the coating according to the Noskov's model.

show abstract

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 50%

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 99%

Section: Coating Characterization 221 Measurement Of the Residual Imentioning

confidence: 99%

See 1 more Smart Citation

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The residual stress inside the samples was analyzed, using MRS, which was regarded as an effective method for residual stress analysis of any semiconductor material, such as silicon. The basic Raman-mechanical model for crystal silicon (C-Si) follows the secular equation of the lattice dynamics [21,27]. According to existing investigations, the Raman-mechanical relationship of C-Si depends on the crystal plane and the stress state for measurement.…”

Section: Distribution Of Residual Stress With Depthmentioning

confidence: 99%

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Qiu

Wang

et al. 2018

Applied Sciences

View full text Add to dashboard Cite

Strained silicon (ε-Si) is a promising material that could extend Moore's law by enhancing electron mobility. A ε-Si material is usually composed of multiscale, multilayer heterostructures, where the strained-silicon film or strap is tens-of-nanometers thick, and its buffer layers are of the micrometer scale. The structural properties determine the electrical performance and reliability of ε-Si-based devices. Inhomogeneous residual stress is induced during the preparation, which induces ε-Si structure failure. In this work, biaxial strained-silicon films that contain graded and relaxed germanium-silicon buffer layers were prepared on monocrystalline silicon wafers through reduced-pressure chemical-vapor epitaxy. The layer components and thicknesses were measured using energy-dispersive spectroscopy and scanning-electron microscopy. Crystal and lattice characters were observed by using high-resolution transmission-electron microscopy and micro-Raman spectroscopy. The residual stress distribution along cross-sections of the ε-Si multilayer structures was examined by using micro-Raman mapping. The experimental results showed that, with a gradual increase in germanium concentration, the increasing residual stress was suppressed owing to dislocation networks and dislocation loops inside the buffer layers, which favored the practical application. may yield a material/structure that meets the design requirements of geometrical dimensions and structural-mechanical properties [7,8]. Furthermore, the design, manufacture, performance evaluation and control technologies for microelectronics with non-uniform and local-singular stress distribution is regarded as the future of the microelectronics industry [9].The (equal biaxial or uniaxial) strain state and its magnitude determine the optical/electrical properties of ε-Si-based devices [10]. The strain state and magnitude of the ε-Si depend heavily on the buffer-layer properties (such as the element composition, thickness, lattice quality, defects and residual stress) and interfacial properties (such as mismatch and shear stress) [11]. Size miniaturization of a ε-Si-based device leads to increased defect densities and residual stress, which results in a degraded optoelectronic performance and structure reliability of the entire integrated device [12].Experimental studies of multilayer heterogeneous structures, such as strained-silicon, face two major challenges, namely, "multiscale" and "multiproperty coupling". A strained-silicon layer is usually several to tens-of-nanometers thick, whereas the buffer-layer thickness tends to be of the micrometer scale, and the substrate is typically several hundreds of microns thick. Unique key physical and mechanical behaviors that interact exist at each spatial scale. Cross-scale interactions between the multiscale physical-mechanical properties increase the complexity of experimental studies of strain silicon.A number of methods at different spatial scales have been applied to experimental studies on multilayer heterogeneous structures [1...

show abstract

“…It is clear from the inset of Figure that the Ge–Ge peak from the sGe channel is situated in between the stress‐free reference of bulk Ge and the biaxial stress‐shifted Ge–Ge peak of the blanket film reference, readily confirming the expectation of more uniaxial stress in the sGe channels in a qualitative manner. For a precise calculation of the stress levels from the Raman peak shifts, the so‐called secular equation was solved for different crystal geometries by I. de Wolf, leading to the following relation between the Raman LO peak shift Δ ω and the different stress components σ xx , σ yy , and σ zz (omitting shear stresses):

Δ ω = \frac{1}{2 ω_{0}} true[true(p S_{12} + q true(S_{11} + S_{12} true) true) true(σ_{x x} + σ_{y y} true) + true(p S_{11} + 2 q S_{12} true) σ_{z z} true]

where S 11 and S 12 are the compliance tensor elements, and p and q are two of the three phonon deformation potentials for the material under consideration.…”

Section: Applications Of Nanofocused Raman Spectroscopymentioning

confidence: 99%

Advanced Raman Spectroscopy Using Nanofocusing of Light

et al. 2017

Self Cite

View full text Add to dashboard Cite

Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction-limited, impeding its application potential in nanostructured devices. Under correct polarization conditions, the Raman response from a periodic array of fins is dramatically enhanced inside the semiconductor material, re-enabling fast and non-destructive optical characterization of deep-subwavelength semiconductor patterns. In this paper, it is shown that the effect is not limited to the material system where it was first observed, and results of nanofocused Raman spectroscopy in a variety of semiconductor materials are presented. The authors illustrate and discuss how the universality of the enhancement creates a unique potential for non-invasive and rapid stress and composition measurements at the nanoscale.

show abstract

Relation between Raman frequency and triaxial stress in Si for surface and cross-sectional experiments in microelectronics components

Abstract: Addendum: "Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment" [J.Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy

Cited by 46 publications

References 41 publications

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3

Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

Advanced Raman Spectroscopy Using Nanofocusing of Light

Contact Info

Product

Resources

About