Regrown source/drain in InGaAs multi-gate MOSFETs

Miyamoto, Yasuyuki; Kanazawa, Toru; Kise, Nobukazu; Kinoshita, Haruki; Ohsawa, Kazuto

doi:10.1016/j.jcrysgro.2019.06.014

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…Achieving a high current density in this context requires heavy doping of the source. 10) In developing an InGaAs MOS transistor, we employed a regrowth process for the source and drain [11][12][13] to increase selectivity. However, a tradeoff exists in the growth conditions between selective growth and heavy doping.…”

Section: Introductionmentioning

confidence: 99%

“…However, a tradeoff exists in the growth conditions between selective growth and heavy doping. 11) Selective growth benefits from higher growth temperatures, while heavy doping necessitates lower growth temperatures. Hence, a novel technique is required to fabricate lateral heterojunctions with heavily doped growth without relying on overly stringent selective growth conditions.…”

Section: Introductionmentioning

confidence: 99%

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GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

Fan,

Xu,

Arai

et al. 2024

Jpn. J. Appl. Phys.

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The regrowth conditions for lateral tunnel field-effect transistors (FETs) featuring heterojunctions involve a tradeoff between selective growth and heavy doping. This study mitigated the connection between single crystals on the InP layer and polycrystals on the SiO2 mask by significantly increasing the thickness of the SiO2 mask to surpass that of the growing GaAsSb layer. We successfully fabricated p-GaAsSb/i-InGaAs tunnel FETs using a thick SiO2 mask, wherein the carrier concentration of the p-GaAsSb source was 5×1019 cm-3, and the growth temperature was maintained at 500 °C. The observed current-voltage (I-V) characteristics exhibited an on/off ratio of 5×104 and demonstrated ambipolar current behavior, confirming the presence of a p-type source. However, the observed subthreshold swing (SS) was limited to 120 mV/dec. In comparison with the I-V characteristics of the planar transistor, degradation of SS can be explained by interface state, and the factor that characterizes the change of the drain current with the surface potential dψs/d(log10 ID) is estimated as 52 mV/dec. 

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

Fan,

Xu,

Arai

et al. 2024

Jpn. J. Appl. Phys.

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High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET

Mohanty

Mishra

Mohapatra

et al. 2020

Iran J Sci Technol Trans Electr Eng

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Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

Aksenov

Valisheva

Горшков

et al. 2022

Journal of Applied Physics

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The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3–4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV−1 cm−2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C.

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Regrown source/drain in InGaAs multi-gate MOSFETs

Cited by 3 publications

References 11 publications

GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET

Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

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Regrown source/drain in InGaAs multi-gate MOSFETs

Cited by 3 publications

References 11 publications

GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET

Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

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GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth