Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process

Panwar, O. S.; Khan, Mukhtar A.; Bhattacharjee, Baibaswata; Pal, A.K.; Satyanarayana, B.; Dixit, P. N.; Bhattacharyya, R.; Khan, Marya

doi:10.1016/j.tsf.2006.05.024

Cited by 26 publications

(31 citation statements)

References 42 publications

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“…The details about the FCVA system and the other deposition conditions have been described earlier. [25][26][27][28] During the deposition of ta-C:H and ta-C:N films, the substrate bias was kept constant at Ϫ300 V and the arc current ͑ϳ75 A͒ and magnetic field ͑ϳ350 G͒ in the S-bend duct were also kept constant. The thickness of the films is found to be in the range of 500Ϯ 100 Å as measured by a Talystep ͑Rank Taylor and Hobson͒ thickness profiler.…”

Section: Methodsmentioning

confidence: 99%

“…The properties investigated are also system dependent. 2 One of the first systematic reports of ta-C films at high substrate bias ͑Ϫ300 V͒ of reflectance and photoluminescence, 25 x-ray photoelectron spectroscopy ͑XPS͒, x-ray Auger induced electron spectroscopy ͑XAES͒, and Raman spectroscopy studies, 26 plasma diagnostic studies 27 and electrical and mechanical properties 28 have been published recently. The current work complements it, especially with reference to the possibility of use of this material as electronic material by studying the defect density measured using space-charge-limited-conduction ͑SCLC͒ studies and the field assisted electron emission of as-grown ta-C, ta-C:H, and ta-C:N films.…”

Section: Introductionmentioning

confidence: 99%

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Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This article reports the influence of substrate bias during growth and of hydrogen and nitrogen incorporation on density of states ͓N ͑E F ͔͒ and field-emission threshold ͑E turn-on ͒ in tetrahedral amorphous carbon ͑ta-C͒ films, deposited using an S-bend filtered cathodic vacuum arc process. The variation in negative substrate bias from Ϫ20 to Ϫ200 V was found to initially lead to a small decrease in N ͑E F ͒ and E turn-on , and a small increase in the emission current density ͑J͒ at 12.5 V / m in the case of as-grown ta-C films; beyond Ϫ200 V substrate bias there is a reversal in the trend. The values of N ͑E F ͒ = 1.3ϫ 10 17 cm −3 eV −1 , E turn-on = 8.3 V / m, and J = 6.19 mA/ cm 2 were observed at Ϫ200 V substrate bias. However at Ϫ300 V the properties were not very different from those at Ϫ200 V substrate bias and so with a view to use the higher energy, hydrogen and nitrogen incorporation studies were carried out in this condition. It was observed that there was further enhancement in properties with hydrogen and nitrogen incorporation. The best properties measured with in the range of hydrogen and nitrogen incorporation in the present study were N ͑E F ͒ = 8.0ϫ 10 16 cm −3 eV −1 , E turn-on = 7.6 V / m, and J = 23.7 mA/ cm 2 , respectively.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The presence of NH 3 and O 2 during Table 2. Blue photoluminescence bands, on top of the broad continua (top two entries in italic) in laboratory ta-C:H (a-C:H materials rich in diamond-like or tetrahedral sp 3 C atom bonding) at 80 K, excited by 300 nm photons (Panwar et al 2006) and in the Red Rectangle HD 44179 (Vijh et al 2004(Vijh et al , 2005c Notes. The most prominent sharp bands in the ta-C:H and ta-C:N laboratory data are marked in boldface.…”

Section: N-dopingmentioning

confidence: 99%

Heteroatom-doped hydrogenated amorphous carbons, a-C:H:X

Jones

2013

A&A

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Context. Hydrogenated amorphous carbons, a-C:H, can incorporate a variety of heteroatoms, which can lead to interesting effects. Aims. We investigate the doping of interstellar a-C:H grains with, principally, Si, O, N and S atoms within the astrophysical context. Methods. A search of the literature on doped a-C:H reveals a number of interesting phenomena of relevance to astrophysics. Results. X dopants in a-C:H:X materials can affect the sp 3 /sp 2 ratio (X = Si, O and N), lead to blue photoluminescence (undoped or X = N), induce ferromagnetic-like behaviour (X = N and S) or simply be incorporated (depleted) into the structure (X = Si, O, N and S). Si and N atoms could also incorporate into fullerenes, possibly forming colour-centres that could mimic diffuse interstellar bands. Conclusions. Doped a-C:H grains could explain several dust-related conundrums, such as: "volatile" Si in photo-dissociation regions, S and N depletion in molecular clouds, blue luminescence, some diffuse interstellar bands and ferromagnetism in carbonaceous grains.

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“…One of the main advantages of FCVA process is a high growth rate process where no hazardous gases like SiH 4 , B 2 H 6 and PH 3 are used to deposit doped silicon films. FCVA is plasma based popular industrial technology for the deposition of variety of films like metals, ceramics, diamondlike carbon and tetrahedral amorphous carbon films [11][12][13][14][15][16][17]. It is a low voltage and high current process that takes place between two electrodes.…”

Section: Introductionmentioning

confidence: 99%

“…EXPERIMENTAL DETAILS P doped Si: H thin films have been prepared by FCVA technique. A detailed description of the system has been described elsewhere [17]. The FCVA process works on the principle of striking the arc (arc voltage of 35-40 V with an arc current of 100 A) between two electrodes.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Phosphorus Doped Hydrogenated Silicon Films by Filtered Cathodic Vacuum Arc Technique

Kesarwani

Panwar

Tripathi

et al. 2014

Physics of Semiconductor Devices

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Abstract-Phosphorous doped hydrogenated silicon thin film has been deposited by filtered cathodic vacuum arc technique at different substrate temperatures at a fixed hydrogen gas pressure. X-ray diffraction, electrical conductivity and optical band gap and scanning electron microscopy have been used to characterize the properties of films.Index Terms-Filtered cathodic vacuum arc, X-ray diffraction, Conductivity, Activation energy, Optical band gap, P doped hydrogenated silicon film.

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Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process

Cited by 26 publications

References 42 publications

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Heteroatom-doped hydrogenated amorphous carbons, a-C:H:X

Synthesis and Characterization of Phosphorus Doped Hydrogenated Silicon Films by Filtered Cathodic Vacuum Arc Technique

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