Synthesis and Characterization of Phosphorus Doped Hydrogenated Silicon Films by Filtered Cathodic Vacuum Arc Technique

Abstract

Abstract-Phosphorous doped hydrogenated silicon thin film has been deposited by filtered cathodic vacuum arc technique at different substrate temperatures at a fixed hydrogen gas pressure. X-ray diffraction, electrical conductivity and optical band gap and scanning electron microscopy have been used to characterize the properties of films.Index Terms-Filtered cathodic vacuum arc, X-ray diffraction, Conductivity, Activation energy, Optical band gap, P doped hydrogenated silicon film.

Nitrogen‐Doped Annealed Nanodiamonds with Varied sp2/sp3 Ratio as Metal‐Free Electrocatalyst for the Oxygen Reduction Reaction

“…As shown in Figure 3, the N 1s XPS spectra of N1100AND1 and N1100AND2 can be deconvoluted into four components consisting of N-C sp 3 (397.6 eV), pyridinic N (398.6 eV), pyrrolic N (400.5 eV), and oxidized pyridinic N (403.8 eV). [8] It appears that some nitrogen atoms enter the inner layer of 1100AND through the defects of the outer layer and bond with the sp 3 carbon. N1100AND2 (N 1.68 at.…”