DOI: 10.1109/isscc.1981.1156267
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Abstract: OVER THE PAST FEW YEARS, there has been a groundswell of support for the use of redundancy in memory components. Redundancy may be the new innovation factor which allows bit density to continue growing at the traditional rate of 2X/year. Previous papers have described redundancy techniques for dynamic RAMS-' and other memory components3 where speed is not the primary goal. This paper will describe techniques utilized in a 40ns 16KX1 static RAM.ent technological factors and random run-to-run process defect dis…

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