Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

Zanolla, N.; Siprak, D.; Tiebout, M.; Baumgartner, P.; Sangiorgi, E.; Fiegna, Claudio

doi:10.1109/ted.2010.2043554

Cited by 18 publications

(19 citation statements)

References 30 publications

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“…7 (c). σ Id exhibits its maximum value when the probability of emission and capture trap state is equal [10]. The existence of two trap states shows higher σ Id than that of one trap state.…”

Section: Resultsmentioning

confidence: 96%

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Feng

Yamada

Ohmori

2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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The influence of random telegraph noise (RTN) in MOSFETs on drain current (I d ) during transition edge of pulse gate voltage (V g ) was investigated. The I d fluctuation under dynamic V g was larger than that under dc bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying V g significantly affect the I d values during the transition edge of dynamic V g . The trap occupation states were governed by the initial time and the profiles of RTN, e.g., the distribution of time constant (τ c and τ e ). The I d fluctuation under dynamic V g can be controlled according to the profiles of RTN. These results provide useful information for designing an ultra-high speed circuit.

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Section: Resultsmentioning

confidence: 96%

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Feng

Yamada

Ohmori

2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…Additionally, the required relationships of and , both in the on and off-state, are not guaranteed to be satisfied in realistic systems. The equality assumption of the transition rates in the on-state, , has no sound physical motivation and the condition that is only partially backed up by measurements results [22], [23].…”

Section: F Limitations Of the Idealized Trap Modelmentioning

confidence: 99%

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Mahmutoglu

Demir

2015

IEEE Trans. Circuits Syst. I

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Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian et al. proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.Index Terms-Low-frequency noise, noise analysis, nonstationary noise, RTS noise.

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“…Conventionally, RTN is the fluctuation of current due to the capture and emission of a single electron at a trap [8]. The activation energies and location of the traps, and the electron emission time constant, T e , and electron capture time constant, T c , have been extensively studied in conventional flash memories [9,10], DRAM's [11] and CMOS dielectrics [12][13][14][15]. In [14], oxygen vacancy is linked to RTN, but since oxygen mobility in dielectric is low, RTN is not able to be removed.…”

Section: Introductionmentioning

confidence: 99%

“…In [14], oxygen vacancy is linked to RTN, but since oxygen mobility in dielectric is low, RTN is not able to be removed. Forward-biasing the substrate has been shown to alleviate RTN behavior in CMOS transistors, but the effect is temporary, because RTN behavior returns when the bias is removed [13]. The T e and T c are also found to change after soft breakdown of the dielectric in [15].…”

Section: Introductionmentioning

confidence: 99%

Array-level stability enhancement of 50nm AlxOy ReRAM

Iwasaki

Ning

Yamazawa

et al. 2015

Solid-State Electronics

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Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

Cited by 18 publications

References 30 publications

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Array-level stability enhancement of 50nm AlxOy ReRAM

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