Reduction of point defect density in cubic GaN epilayers on (0 0 1) GaAs substrates using Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si17.gif" overflow="scroll"><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si18.gif" overflow="scroll"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>N/GaN superlattice underlayer

Chichibu, S. F.; Sugiyama, Mutsumi; Nozaka, Takashi; Suzuki, Tomonori; Onuma, Takeyoshi; Nakajima, Kiyomi; Aoyama, T.; Sumiya, Masatomo; Chikyow, Toyohiro; Uedono, Akira

doi:10.1016/j.jcrysgro.2004.08.086

Cited by 6 publications

(2 citation statements)

References 33 publications

(50 reference statements)

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“…The impact of nitrogen on the S-parameter indicates that the introduction of nitrogen forms particular regions where positrons preferably exist. According to the paper of Chichibu et al, 17) the S-parameter for defect-free bulk GaN is much smaller than that for the defect-free bulk GaAs. Therefore, it is thought that the particular regions formed by the introduction of nitrogen have high nitrogen concentrations owing to the localization of nitrogen.…”

Section: Discussionmentioning

confidence: 93%

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Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

Nakamoto

Ishikawa

Kondow

et al. 2011

Jpn. J. Appl. Phys.

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We study the annealing behavior of GaNAs by positron annihilation spectroscopy and photoluminescence spectroscopy. The introduction of nitrogen reduces the S-parameter of the material, which is further lowered by annealing. Moreover, the samples show typical optical characteristics of the GaNAs system. The results suggest that the observed reduction of the S-parameter is not simply due to the reduction of vacancy-type defects, but could be related to the characteristic carrier localization in this material system.

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Section: Discussionmentioning

confidence: 93%

“…Consequently, it is a specific behavior of positrons in GaNAs. Chichibu et al17) indicated that the S-parameter for defect-free bulk GaN is much smaller than that for defect-free bulk GaAs. Their results would explain the observed S-parameter reduction as a consequence of GaN within the GaAs matrix.…”

mentioning

confidence: 99%

Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

Nakamoto

Ishikawa

Kondow

et al. 2011

Jpn. J. Appl. Phys.

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Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

Laifi

Chaaben

Gmili

et al. 2017

Vacuum

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Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

et al. 2019

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The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ultraviolet C (UVC) emission is investigated comprehensively. For comparison of the FFA Sp-AlN template with low TDDs, a conventional MOVPE (metalorganic vapor phase epitaxially)-grown AlN/sapphire (MOVPE-AlN) template with TDDs of 1 × 109 cm−2 was prepared. Consequently, cathodoluminescence (CL), temperature-dependent photoluminescence (PL), and time-resolved PL (TR-PL) measurements verified that both the FFA Sp-AlN template and n-AlGaN underlayer are indispensable for obtaining MQWs with high internal quantum efficiencies, which decrease the TDDs and point defect (PD) densities. Our results revealed that 10-period quantum wells (10QWs)/n-AlGaN/AlN grown on the FFA Sp-AlN template exhibit a lower dark spot density in CL panchromatic intensity maps, a higher integrated emission intensity ratio from the temperature-dependent PL (from 15 to 300 K), and a longer nonradiative lifetime from the TR-PL measurements at 300 K compared with those grown on the MOVPE-AlN template. Moreover, we found that the optical properties of 10QWs/AlN in FFA Sp-AlN and MOVPE-AlN templates do not exhibit a significant difference because of the existence of numerous PDs. Our experimental results demonstrate the favorable impact of the FFA Sp-AlN template for low-TDDs and the n-AlGaN underlayer for low-PDs, which holds promise for highly efficient AlGaN deep-ultraviolet light-emitting devices.

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Reduction of point defect density in cubic GaN epilayers on (0 0 1) GaAs substrates using AlxGa1-xN/GaN superlattice underlayer

Cited by 6 publications

References 33 publications

Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

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