2004
DOI: 10.1016/j.jcrysgro.2004.08.086
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Reduction of point defect density in cubic GaN epilayers on (0 0 1) GaAs substrates using AlxGa1-xN/GaN superlattice underlayer

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Cited by 6 publications
(2 citation statements)
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References 33 publications
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“…The impact of nitrogen on the S-parameter indicates that the introduction of nitrogen forms particular regions where positrons preferably exist. According to the paper of Chichibu et al, 17) the S-parameter for defect-free bulk GaN is much smaller than that for the defect-free bulk GaAs. Therefore, it is thought that the particular regions formed by the introduction of nitrogen have high nitrogen concentrations owing to the localization of nitrogen.…”
Section: Discussionmentioning
confidence: 93%
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“…The impact of nitrogen on the S-parameter indicates that the introduction of nitrogen forms particular regions where positrons preferably exist. According to the paper of Chichibu et al, 17) the S-parameter for defect-free bulk GaN is much smaller than that for the defect-free bulk GaAs. Therefore, it is thought that the particular regions formed by the introduction of nitrogen have high nitrogen concentrations owing to the localization of nitrogen.…”
Section: Discussionmentioning
confidence: 93%
“…Consequently, it is a specific behavior of positrons in GaNAs. Chichibu et al17) indicated that the S-parameter for defect-free bulk GaN is much smaller than that for defect-free bulk GaAs. Their results would explain the observed S-parameter reduction as a consequence of GaN within the GaAs matrix.…”
mentioning
confidence: 99%