2011
DOI: 10.1143/jjap.50.04dh09
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Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

Abstract: We study the annealing behavior of GaNAs by positron annihilation spectroscopy and photoluminescence spectroscopy. The introduction of nitrogen reduces the S-parameter of the material, which is further lowered by annealing. Moreover, the samples show typical optical characteristics of the GaNAs system. The results suggest that the observed reduction of the S-parameter is not simply due to the reduction of vacancy-type defects, but could be related to the characteristic carrier localization in this material sys… Show more

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Cited by 6 publications
(1 citation statement)
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“…The results suggest that GaInNAs is suitable as the gain medium of a small cavity structure. The reported case of GaInN shows strong potential disorder within the system and hence the diffusion of the carriers is small, 15,18,19,25) inducing a small surface recombination velocity at the edge of the processed air hole.…”
Section: Fabrication Damage On Gainnas Gainmentioning
confidence: 94%
“…The results suggest that GaInNAs is suitable as the gain medium of a small cavity structure. The reported case of GaInN shows strong potential disorder within the system and hence the diffusion of the carriers is small, 15,18,19,25) inducing a small surface recombination velocity at the edge of the processed air hole.…”
Section: Fabrication Damage On Gainnas Gainmentioning
confidence: 94%