We study the annealing behavior of GaNAs by positron annihilation spectroscopy and photoluminescence spectroscopy. The introduction of nitrogen reduces the S-parameter of the material, which is further lowered by annealing. Moreover, the samples show typical optical characteristics of the GaNAs system. The results suggest that the observed reduction of the S-parameter is not simply due to the reduction of vacancy-type defects, but could be related to the characteristic carrier localization in this material system.

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