Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Timm, Rainer; Fian, Alexander; Hjort, Martin; Thelander, Claes; Lind, Erik; Andersen, Jesper N; Wernersson, Lars‐Erik; Mikkelsen, Anders

doi:10.1063/1.3495776

Cited by 68 publications

(76 citation statements)

References 19 publications

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“…Although there are many studies on high-k/GaAs and high-k/InGaAs structures, [3][4][5][6][7] only a few high-k/InAs structures have been investigated. 8,9 Moreover, most of studies for high-k/InAs have focused on (100) surface orientation, 10,11 with few (110) InAs investigations published. 12 Besides the introduction of high electron mobility channels, the device architectures are also very important for performance enhancement.…”

Section: Introductionmentioning

confidence: 99%

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Wang

Doornbos²,

Astromskas³

et al. 2014

AIP Advances

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Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (Dit) profiles show Dit minima of 6.1 × 1012/6.5 × 1012 and 6.6 × 1012/7.3 × 1012 cm−2 eV−1 for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (Dit) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.

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Section: Introductionmentioning

confidence: 99%

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Wang

Doornbos²,

Astromskas³

et al. 2014

AIP Advances

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“…9 However, our measured As 2p 3/2 peaks as those displayed in Fig. 3(c) are symmetrical and show no shoulders, with a full width at half maximum of only 2.1 eV (for 11 keV excitation energy).…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 50%

“…3 Very thin homogeneous high-k oxide layers can routinely be formed by atomic layer deposition (ALD), 2, 4, 5 where even a self-cleaning effect on the native oxide has been observed. [6][7][8][9] Nevertheless, the stoichiometry of the interface between the III-V semiconductor and the high-k dielectric is still not fully controlled and plays a crucial role for the device performance.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

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Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

et al. 2013

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MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks

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“…[12][13][14][15] Furthermore, this method has been successfully applied for the investigation of the structure and chemical composition of surfaces and interfaces of semiconductors NWs, e.g., to study the composition and removal of surface oxides on InAs NWs 16 or to probe the size and oxidation dependence of the conductivity in GaAs NWs. 17 However, there is a lack of XPS studies on core/shell heterostructure NWs, so far.…”

Section: Introductionmentioning

confidence: 99%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Cited by 68 publications

References 19 publications

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

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