Reduced optical scattering loss in vertical-cavity lasers using a thin (300 /spl Aring/) oxide aperture

“…These losses have been dramatically reduced by confining the mode with apertures rather than etched pillars [4], [5]. Our previous work with thin apertures [6] and tapered apertures [7] has demonstrated further reductions in scattering loss.…”

mentioning

confidence: 99%

High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures

Hegblom

Margalit

Fiore

et al. 1999

IEEE J. Select. Topics Quantum Electron.

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“…Moreover, application of thin (e.g. 30-nm) oxide layers can effectively suppress scattering losses [17]. In the present paper, the standard 12-nm oxide layers are even thinner.…”

Section: The Modelmentioning

confidence: 76%

“…d OX and z are defined in b and c, respectively much thicker than those usually used in these devices would seemingly enable a drastic threshold reduction. However, it should be remembered, that a substantial increase in the thickness of the oxide layer leads to a drastic increase in scattering losses [17]. A threshold reduction may be accomplished with the aid of a simple shifting of a standard thin 12-nm aperture within the first Al 0.90 Ga 0.10 As layer towards the cavity, i.e.…”

Section: Oxide-confined Vcselsmentioning

confidence: 99%

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Sarzała

Piskorski

2010

Appl. Phys. A

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The comprehensive optical-electrical-thermalrecombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and protonimplanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.

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“…It has been demonstrated in shortwavelength VCSELs that thin apertures (30-50 nm) placed at a node show less diffraction losses and high single-mode output powers. 6,7 As shown in Fig. 2, the TJ aperture needs to be incorporated inside the InP to facilitate selective wet etching.…”

Section: Aperture Placementmentioning

confidence: 99%

Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers

Reddy

Feezell

Asano

et al. 2004

Journal of Elec Materi

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We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edgeemitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperture. Single-mode continuous-wave operation of a 1.55-µm VCSEL was demonstrated successfully with a roomtemperature differential efficiency of 21% using a 6-µm-wide TJ aperture.

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Reduced optical scattering loss in vertical-cavity lasers using a thin (300 /spl Aring/) oxide aperture

Cited by 73 publications

References 12 publications

High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures

High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers

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