Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers

Abstract

We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edgeemitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperture. Single-mode continuous-wave operation of a 1.55-µm VCSEL was demonstrated successfully with a roomtemperature differential efficiency of 21% using a 6-µm-wide TJ aperture.

Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics

“…It is based on the selective etching of a TJ to form an apertured air gap useful for both current and optical confinements. These devices have demonstrated SM, CW and high-temperature operation [13,14]. If this confinement system is being widely applied in InP VCSELs technology [11][12][13][14] it has never been reported with the GaSb system.…”

“…These devices have demonstrated SM, CW and high-temperature operation [13,14]. If this confinement system is being widely applied in InP VCSELs technology [11][12][13][14] it has never been reported with the GaSb system.…”