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2011
DOI: 10.1063/1.3557502
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Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes

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Cited by 52 publications
(27 citation statements)
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“…Indeed, the films deposited by Vasilopoulou et al [10] are strongly oxygen deficient, which ensures that the Wf of their MoO 3 is small.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Indeed, the films deposited by Vasilopoulou et al [10] are strongly oxygen deficient, which ensures that the Wf of their MoO 3 is small.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the proposition of using MoO x as a CBL is not an incongruous idea, especially because MoO x tends to be metallic. Moreover, Vasilopoulou et al [10] showed that the electron injection in an OLED based on poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo [2,1,3]thiadiazol-4,8-diyl)] (F8BT) can be significantly improved by inserting a very thin layer (5 nm) of partially reduced molybdenum oxide (MoO 2.7 ) between the aluminum cathode and the organic emitting layer. Actually, after measuring the valence band maximum energy of MoO x by UPS to be equal to 7.1 eV and the band gap of MoO 3 to be 3 eV, they conclude that the conduction band minimum is at approximately 4.1 eV, which is in good agreement with the work function of Al (4.3 eV).…”
Section: Introductionmentioning
confidence: 99%
“…MoO 3 enhances hole injection into organic layers by reducing the energy level offset between the highest occupied molecular orbital (HOMO) of the organics and the Fermi level (E F ) of the anode electrode. Greiner et al [22] and Vasilopoulou et al [23] reported that the reduced MoO 3 film (MoOx and x $ 2.7) outperforms stoichiometric Mo trioxide film, due to the presence of defect states in the former. Some groups have emphasized on gap state (or defect state)-assisted transport at the MoO 3Àx /ITO interfaces [24][25][26][27].…”
Section: Introductionmentioning
confidence: 99%
“…Generally, the hole transport in nanostructured MoO 3 layer occurs via the shallow defect states present in its band gap formed as a result of oxygen vacancies [93][94][95]. These oxygen vacancies serve as n-type dopants and lead to Fermi-level pinning at the photoactive layer-MoO 3 interface [96].…”
Section: Metal Oxide Semiconductors (Mos) As Anode Interfacial Layersmentioning
confidence: 99%