Electronic structure of MoO3−x/graphene interface

Wu, Qi‐Hui; Zhao, Yingqi; Guo, Hong; Ren, Jianguo; Wang, Chundong; Zhang, Wenjun; Lee, Shuit‐Tong

doi:10.1016/j.carbon.2013.07.091

Cited by 46 publications

(52 citation statements)

References 47 publications

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“…Based on the distinctive electronic properties of graphene, the BE shift of C 1s core level can be explained by the shift of graphene E F from its E D because of the p‐type doping of graphene upon oxygen species adsorption . Similar phenomenon has been reported in our previous work concerning the deposition of MoO 3 − x and hexadecafluorophthalocyanine (F 16 CuPc) molecules on graphene surface . In addition, no obvious oxidized C peaks appear at the higher BE after graphene has been stored for 12 months, which suggests that the graphene itself is not easy to be oxidized at room temperature …”

Section: Resultssupporting

confidence: 74%

“…Among these, CVD growth has been emphasized because of the high performance/price ratio. Copper (Cu) is one of the most common metallic substrates used in the previous studies because of the fact that it is much easier or simpler to grow single layer graphene (SLG) on the Cu foil compared with other metallic substrates . Recently, Ruoff's group studied the impact of the Cu surface oxygen on the growth of graphene and pointed out that oxygen on the Cu surface greatly inhibited the graphene nucleation density by passivating the Cu surface active sites.…”

Section: Introductionmentioning

confidence: 99%

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Influence of ambient conditions on the electronic structure of graphene/copper interface

Huang

Ren

et al. 2015

Surface & Interface Analysis

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Graphene films grown on the copper foils using chemical vapor deposition have been emphasized in the previous scientific studies and technical applications because of the high quality/cost ratio. However, no enough attention has been paid to the fundamentally important issue on the stability of graphene/copper interface compared with quality of the grown graphene films, though the properties of graphene/metal interface largely affect the Ohmic contacts in graphene-based electronics (e.g. highfrequency graphene transistors). Here, we investigated the electronic structure of graphene/copper interface which has been stored in the ambient conditions for different periods. Raman and photoelectron spectroscopic data indicated that the oxygen species do not prefer to adsorb on the graphene surface but insert into the graphene/copper interface. This results in the p-doping of graphene, formation of the surface positive dipole, and energy upshift of the graphene's Dirac point.

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Section: Resultssupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Influence of ambient conditions on the electronic structure of graphene/copper interface

Huang

Ren

et al. 2015

Surface & Interface Analysis

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“…Existing reports focus on ionization potential and work function measurements, which can only provide insight into one aspect of the electronic properties of the interface and provide indirect evidence of the electronic structure at the interface, including speculation on the formation of a dipole at the MoO 3 /organic interface,[4c,7] with the strength of the dipole at the interface given by the difference in WF of the two materials forming the interface. [7a,b] Such a dipole could generate intermediate energy states and strongly impact on the charge transfer over the interface,[3a,7d] however, observations that the WF and ionization energy of MoO 3 change with the thickness of the deposited MoO 3 layer[5b,7d,8] and the gradual change in the WF of indium tin oxide (ITO)/[6,6]‐phenyl C 71 butyric acid methyl ester (PC 71 BM) reported by Chunhui, which was assigned to a new specimen charge flow complex and interaction of the materials are inconsistent with this model.…”

Section: Introductionmentioning

confidence: 99%

Dipole Formation at the MoO₃/Conjugated Polymer Interface

Yin

Sibley

Quinton

et al. 2018

Adv Funct Materials

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MoO 3 is known as high work function (WF) transparent metal oxides. It is used as anode buffer layer in organic based solar cells because of its capability to extract electrons and inject holes from the active layer due to its high WF. Here a broad range of techniques is used to determine the energy levels of the bulk heterojunction (BHJ) and MoO 3 to determine that the minimum deposition thickness to achieve a closed layer is 1 nm due to penetration of the evaporated MoO 3 into the BHJ. The investigation shows that upon evaporation of the MoO 3 , a strong dipole is formed at the extended interface between the active layer and the MoO 3 and that the strength of the dipole increases with increasing thickness of the MoO 3 layer and saturates at 2.2 eV at a thickness around 3 nm.

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“…[23][24][25][26] Further, lithography typically involves the use of solvents and chemicals that might affect or degrade the properties of doped graphene. [8][9][10][11]21,[27][28][29][30][31] Here, we show that all of these challenges for efficient graphene-based TCEs can be effectively addressed at once via a thin (>10 nm) metal oxide (MoO 3 or WO 3 ) coating of the graphene. The metal oxide can be deposited by various means, 9,18,19 but we focus here on thermal evaporation.…”

mentioning

confidence: 99%

Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

Kidambi

Weijtens

Robertson

et al. 2015

Applied Physics Letters

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Using multi-functional oxide films, we report on the development of an integration strategy for scalable manufacturing of graphene-based transparent conducting electrodes (TCEs) for organic electronics. A number of fundamental and process challenges exists for efficient graphene-based TCEs, in particular, environmentally and thermally stable doping, interfacial band engineering for efficient charge injection/extraction, effective wetting, and process compatibility including masking and patterning. Here, we show that all of these challenges can be effectively addressed at once by coating graphene with a thin (>10 nm) metal oxide (MoO3 or WO3) layer. We demonstrate graphene electrode patterning without the need for conventional lithography and thereby achieve organic light emitting diodes with efficiencies exceeding those of standard indium tin oxide reference devices.

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Electronic structure of MoO3−x/graphene interface

Cited by 46 publications

References 47 publications

Influence of ambient conditions on the electronic structure of graphene/copper interface

Influence of ambient conditions on the electronic structure of graphene/copper interface

Dipole Formation at the MoO₃/Conjugated Polymer Interface

Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

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Electronic structure of MoO3−x/graphene interface

Cited by 46 publications

References 47 publications

Influence of ambient conditions on the electronic structure of graphene/copper interface

Influence of ambient conditions on the electronic structure of graphene/copper interface

Dipole Formation at the MoO3/Conjugated Polymer Interface

Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

Contact Info

Product

Resources

About

Dipole Formation at the MoO₃/Conjugated Polymer Interface