Reduce Afterpulsing of Single Photon Avalanche Diodes Using Passive Quenching With Active Reset

Liu, Mingguo; Hu, Chong; Campbell, Joe C.; Zeng, Pan; Tashima, M. M.

doi:10.1109/jqe.2007.916688

Cited by 72 publications

(41 citation statements)

References 12 publications

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“…Passive quenching is a frequently used means of quenching, although afterpulsing effects are an issue since the voltage across the device begins to rise immediately following quenching [18]. This means the bias may reach the operation point before all trapped carriers escape from trap states.…”

Section: Passive Quenchingmentioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

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While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors, while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

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Section: Passive Quenchingmentioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

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“…Solutions commonly adopted to reduce the noise in SPAD detectors regard dedicated technologies with lower doping profiles [10], cooling methods either with Peltier elements [11] or air cooling [12], and advanced front-end circuits that use PQCs or AQCs with ARCs [13][14][15][16]. However, none of the presented techniques is completely satisfactory given the high fabrication costs of dedicated technologies, the reduced applicability of cooling methods or the limited efficiency of advanced front-end circuits in reducing the afterpulsing probability only.…”

Section: Avalanche Photodiodesmentioning

confidence: 99%

Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

Figueras

Diéguez

2013

Microelectronics Journal

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a b s t r a c tThree different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20 mm Â 100 mm (width Â length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behavior. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated 'on' periods of 10 ns and a reverse bias overvoltage of 0.5 V. The three pixels have been fabricated in a standard HV-CMOS process.

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“…10, No. 1;2016 In doing so, it was determined that the LED was behaving in a manner consistent with single photon detection, and even observed afterpulsing (i.e., a photon event triggering a second spurious avalanche of current), a common characteristic of APD devices (Liu, Hu, Campbell, Pan, & Tashima, 2008).…”

Section: Introductionmentioning

confidence: 99%

An Actively Quenched Single Photon Detector with a Light Emitting Diode

Starling¹,

Burger²,

Miller³

et al. 2015

MAS

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Light emitting diodes (LEDs) have applications in many industries for illumination. However, the LED is not limited to the generation of light. In this article, we demonstrate and analyze a low-cost LED for use as a single photon detector, rather than as an emitter. While many technologies have been developed for single photon detection, the focus has been on timing resolution and efficiency-not on cost of production. We compare our device to commercial solutions and validate the efficacy of active quenching to improve maximum photon count rate. While this device may be useful for labs requiring a large number of low-cost detectors, it can also serve as a teaching tool in advanced laboratory settings.

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Reduce Afterpulsing of Single Photon Avalanche Diodes Using Passive Quenching With Active Reset

Cited by 72 publications

References 12 publications

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

An Actively Quenched Single Photon Detector with a Light Emitting Diode

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