Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation

Robinson, A.K.; Reeson, K.J.; Hemment, P.L.F.

doi:10.1063/1.347163

Cited by 9 publications

(6 citation statements)

References 8 publications

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“…In the bulk Si and SIMOX arsenic-doped substrates, the following effects were confirmed 17 : ͑i͒ the same percentage activation was observed after annealing, ͑ii͒ no anomalous diffusion was seen in the SIMOX samples, and ͑iii͒ during further high temperature annealing the buried oxide acted as a diffusion barrier leading to almost uniform doping of the Si overlayer. 18,19 All these are indicative of the high quality of the prepared SOI material.…”

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confidence: 56%

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Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

Katsidis

Siapkas

Robinson

et al. 2001

J. Electrochem. Soc.

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Fourier transform infrared ͑FTIR͒ spectroscopy was employed to characterize the formation process of conducting and/or insulating layers in silicon by arsenic or oxygen ion implantation, respectively. Two methods of buried insulating layer formation were studied. The first involved implantation of 200 keV oxygen ions at a dose of 1.8 ϫ 10 18 cm Ϫ2 at implantation temperature in the range 500-550°C followed by annealing at 1300°C for 5 h. The second involved 190 keV oxygen implantation in three cycles, each cycle followed by annealing at 1315°C for 2 h. The Si overlayer of these substrates as well as bulk Si wafers were then implanted with 70 keV As ϩ ions at a nominal dose of 5 ϫ 10 15 cm Ϫ2 . Annealing at 950 or 1150°C led to dopant activation and the formation of conducting layers. The optical multilayer modeling of such inhomogeneous structures is given in detail. Depth profiles of oxygen atomic concentration or free carrier concentration as well as the corresponding refractive index depth profiles are quantified in a fast, cheap, accurate, and contactless way using FTIR spectroscopy. Furthermore, layer thickness, chemical composition, crystallinity, interface quality, and the electrical and transport properties are also evaluated. The results are in good agreement with ion beam analysis and electrical measurements and it is demonstrated that FTIR spectroscopy can act as a complementary technique to ion beam analysis techniques, taking over the role of the electrical methods ͑which are destructive͒ and giving much more information.

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confidence: 56%

“…This procedure is then repeated until the desired dose (1.9 ϫ 10 18 O ϩ cm Ϫ2 ͒ of oxygen has been incorporated. 17 In both methods after annealing, all implantation damage is removed and the predominant type of defects remaining in the Si overlayer are reported to be threading dislocations 20 which are a potential cause of device failure.…”

Section: Methodsmentioning

confidence: 99%

Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

Katsidis

Siapkas

Robinson

et al. 2001

J. Electrochem. Soc.

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“…17 Regardless of surface silicon thickness, a decrease in active dose is observed in SOI. 17 Regardless of surface silicon thickness, a decrease in active dose is observed in SOI.…”

Section: Discussionmentioning

confidence: 99%

Secondary defect formation in bonded silicon-on-insulator after boron implantation

Saavedra

King

Jones

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Silicon-on-insulator (SOI) has proven to be a viable alternative to traditional bulk silicon for fabrication of complementary metal–oxide–semiconductor devices. However, a number of unusual phenomena with regards to diffusion and segregation of dopants in SOI have yet to be explained. In the present study, SOITEC wafers were thinned to 700 and 1600 Å using oxidation and etching. Ion implantation was performed into SOI and bulk silicon wafers using B+11 ions at 6.5 and 19 keV with a dose of 3×1014 cm−2. Thermal processing occurred in a furnace at 750 °C for times ranging from 5 min to 8 h under an inert ambient. Using quantitative transmission electron microscopy it was observed that the concentration of trapped interstitials and density of {311} defects was significantly reduced in SOI compared to the bulk. Hall effect was used to monitor the activation process of boron in SOI and bulk silicon. Significantly less activation was observed in SOI compared to the bulk and was dependent on the surface silicon thickness. For the first time, a decrease in the trapped interstitial concentration is observed in SOI even with minimal dose loss to the buried oxide. It is hypothesized that the formation of boron–interstitial clusters may be more pronounced in SOI, leading to a reduction in the trapped interstitial population and {311} defect density.

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“…It has been shown that the dopants behavior and extended defects formation depend on the top Si film thickness in SOI [11][12][13] , but up to now, a deep understanding about the mechanism of atomic transport and dopant activation in SOI substrates lacks. In this work, we discuss silicon crystal structural characteristics and electrical activation of As implanted in SOI layers with different thicknesses, considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment, whether it returns to single crystal structure or becomes poly-crystalline.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Arsenic Implanted SOI

Oliveira¹,

Dalponte

Boudinov

2009

ECS Trans.

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Solid phase epitaxy re-growth of arsenic implanted in silicon on insulator (SOI) was studied by Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. Two SOI structures with different Si overlayer and buried oxide thicknesses were used. The As+ implantations were performed with a single energy of 20 keV to a dose of 5x1014 cm-2 in both substrates. A plateau-like profile was achieved in an additional set of SOI samples by triple energy implantation. Rapid thermal annealing and conventional furnace annealing were applied for re-crystallization and dopant activation. The results are discussed considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment.

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Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation

Cited by 9 publications

References 8 publications

Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

Secondary defect formation in bonded silicon-on-insulator after boron implantation

Structural Characterization of Arsenic Implanted SOI

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