Recrystallization processes in polycrystalline silicon

Ouwens, C. Daey; Heijligers, H.J.M.

doi:10.1063/1.87995

Cited by 48 publications

(6 citation statements)

References 3 publications

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“…The average growth rate as a function of time at 1251~ as shown in Fig. 10 can be described empirically by V~ ----Vo exp(--(t --~)/to) [2] In this equation Vo is the average value of the initial growth rate of nuclei (Vo = 0.02 ~m sec -1) and to is a relaxation time determined by the dragging forces for growth (to ----3 9 103 sec).…”

Section: Discussionmentioning

confidence: 99%

Recrystallization of Polycrystalline CVD Grown Silicon

Schins

Bezemer

Holtrop

et al. 1980

J. Electrochem. Soc.

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The recrystallization of fine‐grained polycrystalline silicon (0.1–10 μm) obtained by chemical vapor deposition (CVD) was investigated. Recrystallization of sharply <110> textured material heated at 1350°–1400°C yields an inhomogeneous assembly consisting of 0.02–2 mm long grains of 0.02–0.1 mm diam. New grains are elongated in the direction of growth of the starting material. Grains do not grow further when impinging on each other. Textured material yields a sharply textured primary matrix. No influence of large temperature gradients (up to 500°C/mm) on recrystallization phenomena was observed. The degree of recrystallization as a function of time for fine‐grained material can be described with a constant nucleation rate. From the dependence of the degree of recrystallization upon time and temperature an activation energy of 4.2 eV can be deduced for growth in fine‐grained regions.

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Section: Discussionmentioning

confidence: 99%

Recrystallization of Polycrystalline CVD Grown Silicon

Schins

Bezemer

Holtrop

et al. 1980

J. Electrochem. Soc.

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“…Depending on the thickness, the polysilicon films m a y have pinholes (i) in as-deposited films, (ii) due to phosphorus diffusion which is known to cause preferential grain growth (13,14) perpendicular to the substrate surface and consumption of silicon, (iii) during oxidation, which m a y oxidize the grain boundaries followed b y BHF exposure which then etches out oxide from grain boundaries, (iv) during phosphorus glass deposition and reflow, the effect being similar to that during phosphorus diffusion; this treatment may also lead to diffusion of unwanted impurities into the active areas of the devices, (v) during plasma etching, which may preferentially etch along grain boundaries and also drive the impurities in the gate region, and (vi) during the hydrogen anneal with aluminum metal on, due to the ensuing A1-Si interactions.…”

Section: Discussionmentioning

confidence: 99%

Stability of LPCVD Polysilicon Gates on Thin Oxides

Murarka¹,

Sinha²,

Levinstein³

1980

J. Electrochem. Soc.

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Polysilicon films of thicknesses in the range of 1000–4700Å were characterized as regards (i) pinhole density and (ii) electrical properties of the fabricated MOS capacitors on 1000Å gate oxide. The effect of processing treatments were examined. It was found that (i) the phosphorus diffusion led to pinholes and higher freak population, the density of these being higher in thinner films, and (ii) the phosphorus glass flow caused lower median breakdown fields and higher freak population. On the other hand thermal oxidation and the exposure to window plasma etch did not have any effect on the breakdown field or freak population. High temperature anneal after aluminum deposition led to lower Qnormalss and breakdown field in all films. It is concluded that polysilicon films thicker than 2000Å can be safely used as the MOS gate for VLSI devices.

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“…Under these conditions, the channeling method actually cannot give any evidence that the crystalline structure has not been completely destroyed, since misoriented microcrystallites act as scattering centres. One may expect that during the annealing process polycrystalline material is formed, requiring a temperature of about 1200 "C for annealing [17]. The convincing evidence that a polycrystalline lgyer actually exists a t the surface of the annealed samples, comes from transmission electron microscopy.…”

Section: Discussionmentioning

confidence: 99%

Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions

Golanski¹,

Fiderkiewicz²,

Rzewuski³

et al. 1976

Phys. Stat. Sol. (a)

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The annealing of postimplantation defects in heavily damaged silicon single crystals is studied by backscattering, X‐ray topography, and transmission electron microscopy. It is shown that a dose‐dependent mechanism exists which prevents epitaxial restitution of the damaged lattice during annealing. The critical dose required to improve the annealing results is determined. The interpretation of the transition from the amorphous to the crystalline phase is given.

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Recrystallization processes in polycrystalline silicon

Cited by 48 publications

References 3 publications

Recrystallization of Polycrystalline CVD Grown Silicon

Recrystallization of Polycrystalline CVD Grown Silicon

Stability of LPCVD Polysilicon Gates on Thin Oxides

Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions

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