Recovery Processes of CMP-Induced Damages for Copper/Porous Silica Damascene Interconnects

Ishikawa, Akira; Shishida, Yoshinori; Yamanishi, Toshihiko; Hata, Nobuhiro; Nakayama, Takahiro; Fujii, Nobutoshi; Tanaka, Hirofumi; Matsuo, Hiroki; Kikkawa, Takamaro

doi:10.1149/1.2711078

Cited by 4 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Major problems are delamination caused by chemical mechanical planarization and drastic change in the dielectric due to pore-induced damage occurring in the wet cleaning and ashing processes. Since porous SiOCH occupies a lot of space in a film, it is fragile and readily absorbs any solutions or gases [1][2][3][4][5]. Moreover, Cu atoms easily diffuse into the SiOCH through pores.…”

Section: Introductionmentioning

confidence: 99%

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

2014

View full text Add to dashboard Cite

Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

show abstract

Section: Introductionmentioning

confidence: 99%

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

2014

View full text Add to dashboard Cite

show abstract

“…In this work, we investigate the effect of the CMP process on low-k/Cu monolithic structures fabricated using local CMP technology. [1][2][3][4] Figure 2 illustrates features of the local CMP apparatus, where a rotating polishing head with a CMP pad smaller than the 300 mm wafer scans the wafers, which are oriented face-up on a rotating chuck. The compact CMP head rotates at high speeds of up to 400 rpm and applies a precise polishing pressure of as low as 0.05 psi.…”

Section: Introductionmentioning

confidence: 99%

Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process with In situ End-Point-Detection Technique

Ueki¹,

Onodera²,

Ishikawa

et al. 2009

jjap

View full text Add to dashboard Cite

Defectless monolithic low-k /Cu interconnects have been obtained for low-power LSIs by a chemically controlled local chemical mechanical polishing (CMP) process to remove a Cu/TaN barrier on hydrophobic SiOCH low-k films. In the first step, Cu-CMP, a unique end-pointdetection (EDP) method is implemented to detect a very thin Cu layer ($100 nm) that remains on the TaN barrier by in situ white-light interferometry, which is implemented in the local CMP apparatus where the wafers undergoing polishing are oriented face-up. In the second step, TaN-CMP, a SiO 2 hard-mask (HM) layer on the low-k film is selectively removed to reduce the nonuniformity of the Cu line thickness, and accordingly, those of the resistance and capacitance. Here, a CMP slurry with an oxidizer is used to change the low-k surface from a hydrophobic condition to a hydrophilic condition, improving wettability and reducing the number of scratches and abrasive particles. In the post-CMP cleaning, an alkaline rinse solution with an oxidation-reduction potential (ORP) of less than À0:5 V vs a normal hydrogen electrode (NHE) produces a clean low-k surface resulting in monolithic low-k /Cu interconnects with excellent dielectric properties comparable to those of SiO 2 /Cu interconnects.

show abstract

“…It also gives rise to dielectric degradation and high tooling cost. 2,3 When new materials for conductors, barrier layers, and dielectrics are introduced for future nanodevices, the slurry and stop layer for the CMP process must be investigated to meet surface planarization. Yamada et al 4 studied the influence of CMP and post-CMP cleaning process on the electrical characteristic of Cu/silicon oxycarbide.…”

mentioning

confidence: 99%

Fabrication for Cu/Hydrogen Silsesquioxane Damascene Structure by Nanoimprint

Hsu

Huang

2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

A simple method for Cu/hydrogen silsesquioxane ͑HSQ͒ single damascene fabrication without the conventional chemical mechanical polish process was demonstrated. The 100 nm wide Cu nanowires were fabricated by electron-beam lithography and immersion plating with plating bath CuSO 4 /HF. The resistivity of the Cu nanowires was 4.8-5.3 ⍀ cm after annealing at 400°C for 5 s. The Cu nanowires were transferred onto HSQ by nanoimprint at room temperature with a pressure of 2.2-3.3 MPa. The Cu nanowires were further embedded into the HSQ film to form a Cu/HSQ damascene structure by a simple curing process at 350°C for 10 s. Furthermore, the transferred Cu nanowires were embedded farther in the HSQ film by controlling the curing temperature and time. The topography and cross section of the transferred Cu nanowires on HSQ were examined by a scanning electron microscope. The line-to-line leakage current conduction mechanism of the damascene Cu/HSQ interconnects was studied at various measuring temperatures by a semiconductor parameter analyzer. The phonon-assisted hopping conduction is responsible for the leakage current with a hopping distance of 4.1 Å and a trap level of ϳ2.87 eV.

show abstract

Recovery Processes of CMP-Induced Damages for Copper/Porous Silica Damascene Interconnects

Cited by 4 publications

References 16 publications

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process with In situ End-Point-Detection Technique

Fabrication for Cu/Hydrogen Silsesquioxane Damascene Structure by Nanoimprint

Contact Info

Product

Resources

About