Recording double-exposure interferograms on a photothermoplastic carrier in photoinduced and photothermoplastic regimes

Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

“…Thermoplastic visualization forms a relief-phase image of the registered object with low contrast values of k=0,02-0,24. However, relief-phase carriers are successfully used to record holographic images with high diffraction efficiency [12,20] and resolution power [23]. X-ray holography may be the most promising way to use the proposed carriers.…”

“…1a) and irradiated with visible or x-ray irradiation (6) for a fixed time. Unlike the photothermoplastic process, when illumination and registration are carried out simultaneously [22], in this experiment the carrier is removed from the x-ray chamber after irradiation for the next step of image visualization, as was proposed in work [23]. As was shown in this work, the resistivity of the semiconductor layer is modulated in the irradiated areas.…”

“…1b). The surface of the thermoplastic is charged with positive air ions, and the conductivity of the semiconductor layer in the irradiated areas is higher due to the change of resistivity under irradiation [23]. Positive charges on the surface and negative charges in the semiconductor layer deform the thermoplastic under the Coulomb interaction [10].…”

Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

“…1a) and irradiated with visible or X-ray irradiation (6). Unlike the photothermoplastic process, when illumination and registration are carried out simultaneously [18], the carrier is removed from the X-ray chamber after irradiation for the next step of image visualization [16,19]. After irradiation the carrier is heated up to a vicious state of the thermoplastic layer (T=68 0 C) in darkness and charged for 1,8-2,5 s with a high voltage (7,7 kV) corona charging (Fig.…”

“…1b). The conductivity of the semiconductor layer in the irradiated areas is higher due to the change of resistivity under irradiation [16,19]. Positive charges on the surface and negative charges in the semiconductor layer deform the thermoplastic under the Coulomb interaction [1] and a relief-phase image of the registered object is formed [4].…”