Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

Abstract

The polymer/As-Se-S-Sn structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for X-ray radiation of 0,154 nm was shown.

Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

“…The deformation of the thermoplastic layer in the irradiated areas takes place both under irradiation by a continuous spectrum of λ~0,027-0,25 nm, close to the monochromatic X-ray with the wavelength λ=0,154nm, and monochromatic laser radiation λ=632,8 nm. This indirectly indicates the presence of structural changes in the semiconductor layer under X-ray irradiation, which modulates the resistivity of the semiconductor layer [16,19]. However, no change in the optical transmittance in the (As 2 Se 3 ) 0,8 (As 2 S 3 ) 0,188 Te 0,012 layer under X-rays irradiation at an absorbed dose of 1,6 Gy (continuous spectrum λ~0,027-0,25 nm) and exposures up to 24,6 J/cm 2 (λ~0,154 nm) was detected.…”

“…1a) and irradiated with visible or X-ray irradiation (6). Unlike the photothermoplastic process, when illumination and registration are carried out simultaneously [18], the carrier is removed from the X-ray chamber after irradiation for the next step of image visualization [16,19]. After irradiation the carrier is heated up to a vicious state of the thermoplastic layer (T=68 0 C) in darkness and charged for 1,8-2,5 s with a high voltage (7,7 kV) corona charging (Fig.…”

“…After irradiation the carrier is heated up to a vicious state of the thermoplastic layer (T=68 0 C) in darkness and charged for 1,8-2,5 s with a high voltage (7,7 kV) corona charging (Fig. 1b) [16]. The surface of the thermoplastic layer is charged with positive air ions (Fig.…”

“…1b). The conductivity of the semiconductor layer in the irradiated areas is higher due to the change of resistivity under irradiation [16,19]. Positive charges on the surface and negative charges in the semiconductor layer deform the thermoplastic under the Coulomb interaction [1] and a relief-phase image of the registered object is formed [4].…”

“…In [15], As 2 S 3 thin films were studied as photoresists in the wavelength range λ=0,1-0,6nm, where their sensitivity is lower and large exposures are required. X-ray imaging studies using the polymer/As-Se-S-Sn structure are presented in work [16], which shows the sensitivity of As-Se-S-Sn to X-rays λ=0,154nm. This work aimed to study chalcogenide glassy semiconductors of the system As-Se-S doped by Te for x-ray imaging.…”