Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Abstract

Nonvolatile logic devices have attracted intensive research attentions recently for energy efficiency computing, where data computing and storage can be realized in the same device structure. Various approaches have been adopted to build such devices; however, the functionality and versatility are still very limited. Here, 2D van der Waals heterostructures based on direct bandgap materials black phosphorus and rhenium disulfide for the nonvolatile ternary logic operations is demonstrated for the first time with the ultrathin oxide layer from the black phosphorus serving as the charge trapping as well as band‐to‐band tunneling layer. Furthermore, an artificial electronic synapse based on this heterostructure is demonstrated to mimic trilingual synaptic response by changing the input base voltage. Besides, artificial neural network simulation based on the electronic synaptic arrays using the handwritten digits data sets demonstrates a high recognition accuracy of 91.3%. This work provides a path toward realizing multifunctional nonvolatile logic‐in‐memory applications based on novel 2D heterostructures.

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

“…It is worth noting that ID increases again, when further negative bias is applied (VG < −47 V). This is because the MoSe2 contributes to electron carrier accumulation due to its ambipolar charge transport properties (Figure 1d It is emphasized that the maximum NDT and voltage range values obtained in the MoSe2-WSe2 vdW-H-TR are larger than in previously reported TMDs-based heterojunction transistors (Table S2) Unlike previously reported ternary inverters, 23,26,38,39 the floating-gate transistor is used as a pull-down transistor in this work. The MoS2 transistor without the floating-gate layer was showed no hysteresis in the transfer characteristics curve ( Figure S11).…”

“…In the complementary circuit consisting of two serially connected transistors, where one transistor is a vdW-H transistor with NDT, the charging pull-up transistor has a comparable resistance region with the discharging pull-down transistor. 22,23 As a result, the vdW-H-based circuit offers an additional output voltage (VOUT) state at which both transistors have a comparable resistance. Thus, ternary logic operation can be achieved.…”

Bioelectronics‐Related 2D Materials Beyond Graphene: Fundamentals, Properties, and Applications

“…Similarly, a trilingual synaptic device based on a BP/ReS 2 heterostructure has been fabricated and operated using different base gate voltages. [243] This device could emulate a biological presynaptic membrane capable of releasing both inhibitory and excitatory neurotransmitters. Besides inorganic 2D semiconductors, organic 2D semiconductors can also be used to fabricate synaptic heterostructure transistors.…”

Reconfigurable Multifunctional Ambipolar Polymer Transistors with Improved Switching-off Capability Upon Non-Uniformly Distributed Compensation Potential

“…The STM transforms to LTM when the stimulations are persistent or repeated, as the EPSC is substantially enhanced after 10 or 50 consecutive identical pulses and retains for longer time at high values. Long-term potentiation and depression (LTP, LTD) are also accomplished in the synaptic transistor, which is useful features for neuromorphic computing 17,40,68 . Figure 4j shows the PSC of the synaptic transistor after a series of excitatory spikes and inhibitory spikes.…”

“…In addition, neural-like electronic devices and neuromorphic computing that mimics the human brain provide an efficient information processing method [4][5][6][11][12][13][14][15][16] . Nevertheless, this also places higher demands on the functions of devices and circuits 8,17 . A single device which can emulate the synapses with the functions of both signal transmission and non-volatile memory is indispensable for neuromorphic electronics 5,14,18 .…”