Recombination mechanism and carrier lifetimes of semi-insulating GaAs:Cr

Papastamatiou, M.; Papaioannou, G.

doi:10.1063/1.346749

Cited by 20 publications

(5 citation statements)

References 19 publications

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“…There is also evidence that carrier lifetimes, ;,,, vary with the chip depth, along the gap direction. 6 Another shortcoming of this model is the simple linear dependence of 1 (Vb) in equation (10), or v(V,) in equation (6), on bias voltage. In reality, after the carrier drift velocity peaks, near 400 V/mm for unirradiated GaAs, any further increase in the bias electric field actually causes the drift velocity to decrease.…”

Section: (6)mentioning

confidence: 99%

GaAs semi-insulator detector for gamma and charged-particle radiation

Moy¹,

Wang

Flatley

et al. 1992

SPIE Proceedings

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Silicon positive-intrinsic-negative (p-i-n) diodes have been used in plasma diagnostics by the Los Alamos and Lawrence Livermore National Laboratories (LANL and LLNL) since the early seventies. Since the response bandwidth of these detectors is relatively poor (typically, 5-ns FWHM for 1-cm2 sensitive area and 25O-m depletion depth), they are too slow for high-speed applications. GaAs photoconductive detectors (PCD) have been developed since the early eighties at LANL and later at LLNL, and can be tailored by judicious neutron damage to provide the required high-speed bandwidth. Unfortunately, for surface absorbed or non-penetrating radiation, we have discovered that the PCD sensitivity is not flat across its gap, where the incident radiation is perpendicular to the bias electric field. This response non-uniformity can lead to erroneous measurements in cases where the radiation is spatially varying. To overcome this problem, we re-oriented the GaAs chip to allow the radiation to be incident through the electrode and parallel to the bias electric field. Then to increase bandwidth, we doped the GaAs crystal with chromium to create trapping sites and provide large resistivity ( iO (i-cm), thus creating a semi-insulator detector (SID). We will present and discuss the merits of the SID versus PCD and p-i-n diode by showing pulse response data of each detector characterized with 16-MeV endpoint gamma and electron radiation created by the EG&G/EM linear accelerator (Linac) and 5-to 16.5-MeV proton radiation produced by the LLNL Tandem Van de Graaff (TVDG). Application of the SID in Compton electron spectrometry will also be discussed.

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Section: (6)mentioning

confidence: 99%

GaAs semi-insulator detector for gamma and charged-particle radiation

Moy¹,

Wang

Flatley

et al. 1992

SPIE Proceedings

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“…In these studies, 60-600 ns [16] and 0.5-5 ns [17] lifetimes for electrons were obtained at relatively low injection levels. The values obtained in [16] are in good agreement with the data obtained from the measurements of charge collection efficiency (approximately 80 ns [4]). The results of Ref.…”

Section: Introductionmentioning

confidence: 99%

“…To the best of our knowledge, OPTP spectroscopy has not previously been used to study GaAs:Cr. Nevertheless, the relaxation dynamics of charge carriers in GaAs:Cr were studied by measuring the photoluminescence decay, stationary photoconductivity and photoelectromagnetic effect [16,17]. In these studies, 60-600 ns [16] and 0.5-5 ns [17] lifetimes for electrons were obtained at relatively low injection levels.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, the relaxation dynamics of charge carriers in GaAs:Cr were studied by measuring the photoluminescence decay, stationary photoconductivity and photoelectromagnetic effect [16,17]. In these studies, 60-600 ns [16] and 0.5-5 ns [17] lifetimes for electrons were obtained at relatively low injection levels. The values obtained in [16] are in good agreement with the data obtained from the measurements of charge collection efficiency (approximately 80 ns [4]).…”

Section: Introductionmentioning

confidence: 99%

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Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

et al. 2021

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The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.

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“…Наконец, легирование полупроводников A III B V атомами переходных элементов можно считать " традиционным" приемом для управления рекомбинационными характеристиками структур, а именно соотношением времен излучательной и безызлучательной рекомбинации [5,6].…”

Section: Introductionunclassified

Фотолюминесценция с временным разрешением в гетероструктурах с квантовыми ямами InGaAs:Cr/GaAs

Дорохин¹,

Demina²,

Данилов³

et al. 2020

Физика И Техника Полупроводников

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We present the results of time-resolved photoluminescence measurements carried out for semiconductor heterostructures containing two non-interacting quantum wells in the GaAs matrix: an undoped InGaAs quantum well and a quantum well uniformly doped with chromium atoms (InGaAs : Cr). It has been shown that the introduction of Cr significantly affects the recombination lifetime of carriers in quantum wells. The change in the intensity of photoluminescence, starting from the moment of excitation, is not described by a monoexponential decay function, which is explained by a change in the built-in electric field of the surface barrier in quantum wells due to screening by photoexcited carriers.

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Recombination mechanism and carrier lifetimes of semi-insulating GaAs:Cr

Cited by 20 publications

References 19 publications

GaAs semi-insulator detector for gamma and charged-particle radiation

GaAs semi-insulator detector for gamma and charged-particle radiation

Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

Фотолюминесценция с временным разрешением в гетероструктурах с квантовыми ямами InGaAs:Cr/GaAs

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