Фотолюминесценция с временным разрешением в гетероструктурах с квантовыми ямами InGaAs:Cr/GaAs

Abstract

<jats:p> We present the results of time-resolved photoluminescence measurements carried out for semiconductor heterostructures containing two non-interacting quantum wells in the GaAs matrix: an undoped InGaAs quantum well and a quantum well uniformly doped with chromium atoms (InGaAs : Cr). It has been shown that the introduction of Cr significantly affects the recombination lifetime of carriers in quantum wells. The change in the intensity of photoluminescence, starting from the moment of excitation, is not described by a monoexponential decay function, which is explained by a change in the built-in electric field of the surface barrier in quantum wells due to screening by photoexcited carriers. </jats:p>