Recombination Dynamics in InxGa1™xN-Based Nanostructures

Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy

“…2,3) For the recombination mechanisms, it has been reported that the spatial distribution of radiative and nonradiative recombination centers (NRCs) caused by local potential fluctuations on the nanometer order is closely associated with carrier recombination processes in InGaN quantum wells (QWs). [4][5][6][7][8][9] Several experimental tools are available to locally assess the carrier dynamics. Confocal microscopy is a relatively easy method to use, but its spatial resolution is closely related to the diffraction limit.…”

“…Scanning near-field optical microscopy (SNOM) is capable of local optical characterization with a spatial resolution exceeding the diffraction limit. [6][7][8][9][12][13][14][15] Moreover, information related to local carrier diffusion/recombination processes can be obtained by comparing data taken under the appropriate photoexcitation and photoluminescence (PL) collection configuration. 15) In the illumination (I) mode, the sample is locally photoexcited through a probe aperture, and then the PL signal is collected in a far field.…”