Recombination centers in silicon transistor emitter-base junctions

Bartholomew, C. Y.

doi:10.1109/t-ed.1967.15982

IEEE Trans. Electron Devices

1967

DOI: 10.1109/t-ed.1967.15982

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Recombination centers in silicon transistor emitter-base junctions

C. Y. Bartholomew¹

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1968

1981

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Cited by 4 publications

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Radiation effects of fast neutrons in silicon diffused detectors

Sachelarie

Dragan

Stoica

et al. 1981

Phys. Stat. Sol. (a)

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With a new method, the .ratio of the thermal emission probabilities of the carriers a t the acceptor level E, ( E , -0.39 eV) induced in silicon by fast neutron irradiation, e,/ep = 500 at 300 K, and t h e defect introduction rate, 7 = 3.2 cm-l, are determined. These results are used for designing a silicon detector with p+-n diffused junction used for the spectrometry and dosimetry of fast neutrons for medical and biological purposes. HOBbIM MeTOnOM OIIpenenHmTCR COOTHOUleHHe BePOHTHOCTeB TeIlJIOBOfi 3MMCCMH HOCM-Teneii Ha aH~eHTOpHOM YpOBHe E, ( E , -0,39 ev), BBeAeHHbIM M3JIyseHMeM 6bICTPbIMH HefiTPOHaMH, en/ep = 500 IIPM 300 K, M CKOPOCTb BBeneHMH ne@eIcTOB ' Y) = 3.2 Cm-'. 3 T M pe3yJIbTaTbI HCIIOJIb30BaJIMCb nJlR IIpOeKTHpOBaHHR IcpeMHMeBOrO nH@@Y3HOHHOrO p+-n HeTeRTOpa, yIIOTpe6JIeHHbIM nJIH CIIeKTpOMeTpMH M H03MMeTpHH 6bICTPbIX HeiiTPOHOB B M~~H K O -~M O J I O~M~~C K M X npMKnanHbxx aanasax.

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Radiation effects of fast neutrons in silicon diffused detectors

Sachelarie

Dragan

Stoica

et al. 1981

Phys. Stat. Sol. (a)

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Noise due to generation and recombination of carriers in p-n junction transition regions

Lauritzen

1968

IEEE Trans. Electron Devices

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Linear operation of a p-n-p-n tetrode

Voulgaris¹,

Yang²

1969

IEEE Trans. Electron Devices

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Recombination centers in silicon transistor emitter-base junctions

Cited by 4 publications

References 5 publications

Radiation effects of fast neutrons in silicon diffused detectors

Radiation effects of fast neutrons in silicon diffused detectors

Noise due to generation and recombination of carriers in p-n junction transition regions

Linear operation of a p-n-p-n tetrode

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