Stable biasing of multiterminal PNIPN structures to support controlled current filaments is proposed. A filament forms when base layer spreading resistance is sufficiently high for lateral base voltage drops to shut off injection at all but a small interior portion of the structure. For elongated parallel stripe emitter‐base configurations, application of a magnetic field normal to the current filament and stripe axes results in lateral displacement of the filament which is detectable through a change in the external circuit current flow pattern. This displacement can be significantly larger than that of a single‐pass Hall deflection, yielding high sensitivity. Analysis of an ideal model confirms a substantial improvement in performance over that of conventional Hall devices, viz., a manyfold increase in the ratio of short circuit signal current to drive current, similar improvement in signal‐to‐offset ratio, and controllable high output impedance making large signal voltages available. Solutions for the ideal model are presented for carrier transport in the I region both without and with lateral diffusive spread. It is argued that departures of actual device behavior from this model are not apt to be important. Possible circuit connections and a sample calculation of parameter values for a realizable structure are also given.