Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

Xuan, Ming; Yu, Xuegong; Yuan, Shu; Yang, Deren

doi:10.7567/1882-0786/ab14be

Cited by 4 publications

(2 citation statements)

References 30 publications

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“…[36] Sub-GBs, though with a small deviation of crystalline lattice orientation, usually cause distorted regions [13,21] which could attract impurity precipitating and result in dislocation generation, significantly decreasing the minority carrier lifetime because of their strong recombination activity. [37][38][39] Lantreibecq et al [40] observed sub-GBs with TEM and SEM. They found that sub-GBs were constituted by a set of dense, perfectly organized immobile dislocations aligned along the growing direction and having an edge character.…”

Section: Subgrain Boundariesmentioning

confidence: 99%

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

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Cast‐mono silicon (CM‐Si) is a promising substrate to fabricate cost‐effective photovoltaic (PV) wafers used for solar cells with higher efficiency compared with conventional cast multicrystalline silicon (mc‐Si) due to its high throughput and good ingot quality. However, the unavoidable appearance of defects like dislocation, subgrain boundaries, impurities, multicrystallization, and twins, seriously limits its mass‐scale applications in the PV industry. In this review, the growth characteristics of the CM‐Si method are introduced first. Then, the attention is focused on the defects in CM‐Si. Other issues related to production costs that restrict the development of CM‐Si are also addressed in detail, such as seed cost and recycled seeds, n‐type CM‐Si, and large‐size CM‐Si. Finally, a conclusion is made and the prospects are given about the CM‐Si technique.

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Section: Subgrain Boundariesmentioning

confidence: 99%

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Huang

Yuan

et al. 2022

Physica Status Solidi (a)

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“…GB is another dominant lifetime-limiting defect in multi-and cast-mono crystalline silicon. In general theory, GB can be For more details of SA GB, Mao et al [89] provided some information about its recombination activity. They investigated the recombination activities of SA GB in cast mono silicon (CM-Si) and found that the recombination activity of SA GB increased with the mis-orientation angle and saturated at the mis-orientation angle above 0.7 • , as shown in figure 15.…”

Section: Passivation Of Grain Boundarymentioning

confidence: 99%

Progress of hydrogenation engineering in crystalline silicon solar cells: a review

Song¹,

Hu²,

Lin³

et al. 2022

J. Phys. D: Appl. Phys.

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Crystalline silicon solar cells are always moving towards “high efficiency and low cost”, which requires continuously improving the quality of crystalline silicon materials. Nevertheless, crystalline silicon materials typically contain various kinds of impurities and defects, which act as carrier recombination centers. Therefore these impurities and defects must be well controlled during the solar cell fabrication processes to improve the cell efficiency. Hydrogenation of crystalline silicon is one important method to deactivate these impurities and defects, which is so-called “hydrogenation engineering” in this paper. Hydrogen is widely reported to be able to passivate diverse defects like crystallographic defects, metallic impurities, boron-oxygen related defects and etc, but the effectiveness of hydrogen passivation depends strongly on the processing conditions. Moreover, in this decade, advanced hydrogenation technique has been developed and widely applied in the photovoltaic industry to significantly improve the performance of silicon solar cells. As the research on hydrogenation study has made a significant progress, it is the right time to write a review paper on introducing the state-of-the-art hydrogenation study and its applications in photovoltaic industry. The paper first introduces the fundamental properties of hydrogen in crystalline silicon and then discusses the applications of hydrogen on deactivating/inducing typical defects (e.g. dislocations, grain boundaries, various metallic impurities, boron-oxygen related defects and LeTID) in p- and n-type crystalline silicon, respectively. At last, the benefits of hydrogenation engineering on the next-generation silicon solar cells (e.g. TOPCon and HJT solar cells) are discussed. Overall, it was found that hydrogen can deactivate most of typical defects (sometimes induce defect) in n- and p-type crystalline silicon, leading to a significant efficiency enhancement in PERC, TOPCon and HJT solar cells. In conclusion, the paper aims to assist young researchers to better understand hydrogenation research and shed light on the future development of hydrogenation study.

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Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

et al. 2020

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Silicon has dominated the photovoltaic material market for a few decades. In contrast to perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much more attention due to its low cost and high throughput, which meets the increasing demands of the rapidly developing photovoltaic industry. However, the unavoidable appearance of crystallographic defects seriously limits the performance improvement of solar cells. In this Review, a general overview of the recent efforts in high‐quality casting silicon crystal techniques is provided, including the dendritic cast method, high‐performance multi‐crystalline silicon, and cast‐mono silicon. Then, special attention is focused on the seed‐assisted growth of cast‐mono silicon, which shares some of the most favorable features of high solar cell efficiency offered by well‐established CZ silicon and cost‐effectiveness of cast multi‐crystalline silicon. Nevertheless, this innovative growth technique facing a few challenges once impeded its mass scale production. The main issues concerning nucleation and growth control, extended defects as well as impurity contamination are addressed, which pave the way for this high‐potential technology in applications for high‐efficiency and low‐cost solar cells.

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Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

Cited by 4 publications

References 30 publications

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

Progress of hydrogenation engineering in crystalline silicon solar cells: a review

Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies

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