Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

The Effect of Energy Loss Straggling on SEUs Induced by Low-Energy Protons in 28 nm FDSOI SRAMs

“…The cross-sections of each energy point were calculated by (3) and relevant results were given in Figure 4. In Formula (3), N upsets represents the number of upsets recorded by the monitor computer while F proton and V SRAM represent particle fluence and memory capacity, respectively. Since multiple-bit upsets (MBUs) were hardly observed during exposure, black circles are virtually regarded as single-bit upsets (SBUs).…”

“…Consequently, this factor should be taken into consideration to more accurately evaluate SEU cross-sections. The sensitive volume was divided into three parts according to [3], as shown in Figure 5. Part 1 and part 3 corresponded to quite low energy collection efficiency of 10% which could be ignored, whereas part 2 occupying about half of the area corresponded to a high value.…”

“…Part 1 and part 3 corresponded to quite low energy collection efficiency of 10% which could be ignored, whereas part 2 occupying about half of the area corresponded to a high value. The value was calculated by (3). In this equation, There is a variation of energy collection efficiency in different regions of the sensitive volume [3].…”

“…The value was calculated by (3). In this equation, There is a variation of energy collection efficiency in different regions of the sensitive volume [3]. Consequently, this factor should be taken into consideration to more accurately evaluate SEU cross-sections.…”

“…Space is a proton rich environment [3] and proton-induced SEU and were conventionally dominated by secondary ions generated from nuclear reactions between high-energy protons and other atoms in devices [4]. However, SRAMs have scaled to the point that even protons with low-energy can deposit sufficient energy in the sensitive volume to cause upsets via direct ionization [5].…”