Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

“…However, due to the lack of effective p‐type doping, the high‐voltage enhancement‐mode (E‐mode) operation is comparatively difficult to be achieved. Even so, there have been many reports on E‐mode β ‐Ga 2 O 3 MOSFETs in the last few years . Gate recess has been widely used to realize E‐mode β ‐Ga 2 O 3 MOSFETs, in which the breakdown voltage reaches 505 V .…”

“…Even so, there have been many reports on E‐mode β ‐Ga 2 O 3 MOSFETs in the last few years . Gate recess has been widely used to realize E‐mode β ‐Ga 2 O 3 MOSFETs, in which the breakdown voltage reaches 505 V . Lateral β ‐Ga 2 O 3 fin field‐effect transistors (FinFETs) with wrap gates have been reported to attain E‐mode operation .…”

Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3

“…Introduction β-Ga 2 O 3 is under development for power switching and control electronics as well as solar blind UV detection [1][2][3][4][5][6][7][8][9][10][11]. The β polymorph of Ga 2 O 3 has a bandgap of ∼4.8 eV and is commercially available in large diameter bulk and epitaxial form [1][2][3]8].…”

“…Introduction β-Ga 2 O 3 is under development for power switching and control electronics as well as solar blind UV detection [1][2][3][4][5][6][7][8][9][10][11]. The β polymorph of Ga 2 O 3 has a bandgap of ∼4.8 eV and is commercially available in large diameter bulk and epitaxial form [1][2][3]8]. The absence of p-type doping capability [12,13] has led to a focus on vertical Schottky rectifiers and gate allaround FinFET-like devices which operate in accumulation mode in the on-state [1,[3][4][5][7][8][9][10].…”

“…The β polymorph of Ga 2 O 3 has a bandgap of ∼4.8 eV and is commercially available in large diameter bulk and epitaxial form [1][2][3]8]. The absence of p-type doping capability [12,13] has led to a focus on vertical Schottky rectifiers and gate allaround FinFET-like devices which operate in accumulation mode in the on-state [1,[3][4][5][7][8][9][10]. Additionally for lateral devices, the (Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructure has been recently demonstrated using modulation doping of the barrier layer [14][15][16][17][18][19][20][21], as β-Ga 2 O 3 is nonpolar.…”