Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al_0.14Ga_0.86)₂O₃

Abstract

Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86) 2 O 3 To cite this article: Chaker Fares et al 2019 Semicond. Sci. Technol. 34 025006 View the article online for updates and enhancements.

Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65

“…These are consistent with previous reported values. [26][27][28][29][30] Tables I and II show the valence band maximum (VBM) for the dielectrics and the (Al x Ga 1-x ) 2 O 3 obtained using linear fitting of the leading edge of the valence band. Figure 7 shows the core energy differences from XPS spectra for (Al x Ga 1-x ) 2 O 3 to SiO 2 for compositions of 0.20 and 0.35 (a) and 0.50 and 0.65 (b), respectively, as well as (Al x Ga 1-x ) 2 O 3 to Al 2 O 3 for compositions of 0.20 and 0.35 (c) and 0.50 and 0.65 (d), respectively.…”

“…6,13 The ALD layers were deposited at 200°C in remote plasma mode in a Cambridge Nano Fiji 200 using a trimethylaluminum precursor or Tris (dimethylamino) silane and an inductively coupled plasma (ICP) at 300 W to generate atomic oxygen. [26][27][28][29] For substrate cleaning prior to deposition, a rinse sequence consisting of acetone and IPA was followed by drying in filtered N 2 , and finally ozone exposure for 15 min. After this substrate cleaning, samples were directly loaded into the deposition systems within a cleanroom environment to avoid contamination of the deposited films.…”

“…The total energy resolution of this XPS system is about 0.5 eV, and the accuracy of the observed binding energy is within 0.03 eV. [27][28][29][30] To avoid sample charging, charge compensation employed an electron flood gun and a simultaneous ion beam. C 1s core levels of the surface adsorbate (284.8 eV) were used to calibrate the binding energy.…”

“…There are only a few reports of band alignments for dielectrics on (Al x Ga 1-x ) 2 O 3 at a limited range of Al contents 24,25 or even just a single Al concentration (0.14, typical of heterostructure transistor structures). [26][27][28][29] Feng et al 24 determined the band alignment for atomic layer deposited (ALD) SiO 2 on (Al x Ga 1-x ) 2 O 3 with x = 0-0.49. The valence band offsets were in the range 1.5-0.8 eV for this composition range.…”

Investigation on Sensing and Stability of Nitrogen-doped ITO Thin-film Strain Gauges at High Temperatures

“…This can be deduced that more nitrogen atoms were incorporated into the ITO TFSGs and substituted a portion of oxygen atoms with the increase of NPPs. The valence band maximum energy (E v ) of the ITO TFGSs was obtained from the linear tting of the leading edge of the valence band and the at energy distribution based on the XPS data, and nding the crossover point of these two lines [23] . As shown in Fig.…”