Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications - a Synoptic Study

Das, Amit K.; Rewari, Sonam; Kanaujia, Binod Kumar; Gupta, Rashmi

doi:10.1007/s12633-021-01288-w

Cited by 35 publications

(24 citation statements)

References 56 publications

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“…28 Additionally, the outcome of temperature has also been studied on linearity and distortion FOMs. The linearity and distortion FOMs are estimated as per Equations (9)(10)(11)(12)(13)(14)(15)(16) and designed in relation of gate voltage.…”

Section: Impact Of Temperaturementioning

confidence: 99%

“…Various design engineering techniques are also performed to overcome this drawback in NWFET. [12][13][14][15] The conventional MOSFET design offers the severe drawback of abrupt source-drain junctions and high parasitic source-drain resistance. These issues can be overcome by using the Schottky barrier (SB) MOSFET in place of conventional MOSFET.…”

Section: Introductionmentioning

confidence: 99%

“…To overcome this problem the researchers have proposed many fabrication techniques discussed in the fabrication part. Various design engineering techniques are also performed to overcome this drawback in NWFET 12–15 …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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Section: Impact Of Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

Self Cite

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“…FET‐based sensors typically employ metal‐oxide‐semiconductors (MOS) or organic semiconductors as channel materials, as they are cost‐effective, scalable, and have system‐on‐chip (SoC) capabilities. However, MOSFETs also have limitations such as poor signal‐to‐noise ratio, low on/off ratio, slow mobility, and a short lifetime [19–21] . To overcome these limitations, carbon nanomaterials have been proposed as alternative channel materials for FET devices due to their desirable chemical and physical properties, including: ease and breadth of chemical functionalisation strategies; (size) compatibility with biomolecules; their excellent electronic and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

“…However, MOSFETs also have limitations such as poor signal‐to‐noise ratio, low on/off ratio, slow mobility, and a short lifetime. [ 19 , 20 , 21 ] To overcome these limitations, carbon nanomaterials have been proposed as alternative channel materials for FET devices due to their desirable chemical and physical properties, including: ease and breadth of chemical functionalisation strategies; (size) compatibility with biomolecules; their excellent electronic and mechanical properties. These chemical and physical characteristics of carbon nanomaterials can assist in the sensitive detection of target biomarkers with FET biosensing devices setups.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Functionalisation of Nanocarbon‐Based Field‐Effect Transistor Biosensors

et al. 2022

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Nanocarbon-based field-effect transistor (NC-FET) biosensors are at the forefront of future diagnostic technology. By integrating biological molecules with electrically conducting carbon-based platforms, high sensitivity real-time multiplexed sensing is possible. Combined with their small footprint, portability, ease of use, and label-free sensing mechanisms, NC-FETs are prime candidates for the rapidly expanding areas of point-of-care testing, environmental monitoring and biosensing as a whole. In this review we provide an overview of the basic operational mechanisms behind NC-FETs, synthesis and fabrication of FET devices, and developments in functionalisation strategies for biosensing applications.

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Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications - a Synoptic Study

Cited by 35 publications

References 56 publications

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Fabrication and Functionalisation of Nanocarbon‐Based Field‐Effect Transistor Biosensors

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

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