Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

Kumar, Prashanth; Esakki, Papanasam; Agarwal, Lucky; PeddaKrishna,; Kale, Sumit; Bhowmick, Brinda

doi:10.1007/s12633-022-01994-z

Cited by 5 publications

(2 citation statements)

References 97 publications

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“…In order to identify the presence of the Eprotein, RNA (N-Protein), open frame reading b1 (OFRb1), and OFRb2 genes, the procedure involves the acquisition of nasal passage material. 24 The first step in the detection procedure involves introducing the sample or viral RNA into the testing kit. The viral RNA is then replicated by the process of primer annealing, followed by the initiation and progression of the reaction.…”

Section: Recent Research Work: a Brief Overviewmentioning

confidence: 99%

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Venkatesh,

Parthasarathy,

Arun Kumar

2024

ECS J. Solid State Sci. Technol.

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By means of a dielectric modulation method, this research offers the first ever 2D analytical model for the surface potential of a dual material gate Ferroelectric-tunnel-field effect transistor (DMG-Fe-TFET) device used in an enzyme-free biosensor. Compared to a device with a single material gate, the sensitivity of a device with a gate made of two distinct metals (M1-M2) is improved by an increase in tunnelling width at the secondary tunnelling junction. This model accounts for the change in surface potential caused by varying the value, position, and fill factor of the target biomolecules. Several distinct device architectures are used to enhance the efficiency of the envisaged Fe-TFET in the nanoscale range. The DMG-Fe-TFET is one of many cutting-edge FET topologies that can reduce the impact of short-channel effects because of its adaptability. The surface potential can be expressed by computing the two-dimensional Poisson's equation using the parabolic-potential approach. The critical voltage is determined by using the minimal surface potential model. The percent change in the threshold voltage is used to determine the sensitivity of the model. Researchers have investigated how the dimensions of the Nano cavity and other parts of the device affect its sensitivity.

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Section: Recent Research Work: a Brief Overviewmentioning

confidence: 99%

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Venkatesh,

Parthasarathy,

Arun Kumar

2024

ECS J. Solid State Sci. Technol.

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“…2 Bandgap narrowing, mobility effect, and thermionic emission current are incorporated using the Schottky-Read-Hall recombination model, and the bandgap narrowing, Lombardi, and thermionic emission models. 16,17 As for the proposed device, the DG-SBTFET, an assessment of numerical simulation has been performed by TFET and conventional devices. The calibrated graphs are shown in Fig.…”

Section: Simulation Setupmentioning

confidence: 99%

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Shalini,

Kumar

2023

ECS J. Solid State Sci. Technol.

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A novel structure of double gate Schottky barrier tunnel field effect transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances, cut-off frequency, transit time, gain bandwidth product, transconductance generation factor, and transconductance frequency product. Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed DG-SBTFETis suitable for low-power and high-frequency applications.

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Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications

Ashima

Vaithiyanathan

Raj

2023

Silicon

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Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

Cited by 5 publications

References 97 publications

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications

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