Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications

Ashima,; Vaithiyanathan, D.; Raj, Balwinder

doi:10.1007/s12633-022-02272-8

“…This happens because as the dielectric constant increases in the cavity areas, the vertical capacitance between the gate and the channel increases, leading to effective gate capacitance enhancement, boosting gate control over the channel, which results in a reduction in channel surface potential. 61,62 Figure 2b demonstrates the channel surface potential for various biomolecule's charge concentrations, which are classified into three categories: uncharged biomolecules (neutral, K = 12), positively charged biomolecules (1 × 10 11 , 5 × 10 11 , and 1 × 10 12 cm −2 ), and negatively charged biomolecules (−1 × 10 11 , −5 × 10 11 , and −1 × 10 12 cm −2 ). When negatively charged biomolecules are injected into the nanocavity, the minima of surface potential (Ѱ c ) lowers, but (+)vely charged biomolecules raise the minima of surface potential (Ѱ c ).…”

Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Yadav,

Rewari

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor’s output properties, including surface potential, electron concentration, threshold voltage drift (ΔVTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( A V int ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity ( S I ON ) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.

show abstract

“…The presence of biomolecules alters the dielectric constant and capacitance of the gate, thereby inducing a significant change in the threshold voltage and drain current. To enhance the sensitivity of the biosensor, various dielectric modulated biosensors such as Impact Ionization MOSFET [5,6], Tunnel FET [7][8][9][10], multi gate FET [11][12][13][14], Junctionless FET [15][16][17][18][19], and high electron mobility transistors [20,21] have been introduced, each with distinct current transport mechanisms. In diverse configurations, a range of parameters are taken into account to evaluate the responsiveness of the biosensor.…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

Ahangari

2024

Semicond. Sci. Technol.

0

View full text Add to dashboard Cite

In this study, a biosensor utilizing a dielectric-modulated Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistor (TFT) is introduced. Thin film transistor biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power consumption, rapid electrical detection capabilities, and cost-effective means of mass production. By embedding a nano-cavity within the gate insulator of the TFT, biomolecules can accumulate within. As each biomolecule possesses its own dielectric constant, it modulates the effective gate capacitance and, subsequently, changes the channel conductance. To assess the sensitivity of the biosensor, variation in saturation current after the absorption of biomolecules with respect to the drain current in the case of an air-filled cavity has been considered as a precise measure. The efficient operation of a biosensor is contingent upon the sensitivity being highly dependent on the dielectric constant of the biomolecules that are accumulated within the nano-cavity. Consequently, a comprehensive evaluation has been conducted to ascertain the impact of critical design parameters which have the potential to affect the sensitivity of the biosensor. Additionally, a statistical analysis based on coefficient of variation measure has been performed to evaluate the susceptibility of the biosensor's sensitivity to variations in geometrical and physical design parameters. The utilization of label-free detection methodology in this device presents a notable advantage due to its compatibility with the fundamental CMOS processing technology and its cost-effective potential for macro production.

show abstract

“…31 The study shows that biosensors have less short-Channel effects and very high doping profiles. The decrease in SCEs can be done by using multiple gates, GAA, 32 FinFET and the issue of doping can be resolved by junction less FET (JLFET). 33,34 JLFET device is fabricated in the paper 35 and exhibits superior electrical properties when contrasted with the conventional MOSFET.…”

mentioning

confidence: 99%

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Kumar,

Raj,

Wadhwa

et al. 2024

ECS J. Solid State Sci. Technol.

Self Cite

2

0

View full text Add to dashboard Cite

This work is based on the analysis and designing of gate all around N+-doped layer nanowire tunnel field-effect transistors (NTFET) without junctions for application in a biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS), and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N+ doped layer (1×1020cm-3). The change in the subthreshold-slope (SS), drain current (ID), transconductance(gm), and ratio of ION/IOFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The junctionless GAA-NTFET (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for APTS biomolecule which is suitable for sensor design application.

show abstract

Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications

Cited by 7 publications

References 32 publications

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Contact Info

Product

Resources

About