Recent progress of physical failure analysis of GaN HEMTs

Abstract

Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

“…Group III-nitride materials have garnered significant attention in the research field of compound-semiconductor electronics and optoelectronics due to their large direct bandgap and other excellent physical properties [1][2][3][4][5][6][7][8]. In particular, the photoelectric characteristics of InGaN/GaN multiple quantum wells (MQWs) have been investigated intensively, as they are widely used as the active materials of light-emitting devices for the applications of white-light illumination and color display [9][10][11][12][13].…”

Improved barrier homogeneity in Pt/Al0.75Ga0.25N Schottky barrier diodes by graphene interlayer

“…Additionally, the conductivity of Al x Ga 1−x N has a great improvement for the much higher activation efficiency of the dopant in GaN [2,3]. Recently, AlN and Al x Ga 1−x N (with high Al-content) based electronic devices including SBDs [4][5][6][7][8], metal-insulator-semiconductor field-effect-transistor (MISFET) [9], metal-semiconductor field-effect-transistor (MESFET) [10] and high electron mobility transistor (HEMT) [11,12] have been demonstrated. These works show the great potential of developing AlN based electronic devices.…”