Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Liu, Wei; Liang, Feng; Zhao, Degang; Yang, Jing; Chen, Ping; Liu, Zongshun

doi:10.3390/cryst12030339

Cited by 4 publications

(3 citation statements)

References 37 publications

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“…It has further been shown that the luminous intensity of the samples decreases significantly as the thickness is further reduced to 5 nm. This may be caused by quantum tunneling-assisted leakage of carriers and deterioration in crystal quality, which lead to increased non-radiative losses [ 93 ]. Therefore, designing extremely thin QB samples requires fine interface quality control to meet theoretical expectations.…”

Section: Solution For Increasing Eqe Of µLedsmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang

Kang

et al. 2023

Micromachines

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GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as are the optimization techniques for improving the EQE of µLEDs.

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Section: Solution For Increasing Eqe Of µLedsmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang

Kang

et al. 2023

Micromachines

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show abstract

“…It has further been shown that the luminous intensity of the samples decreases significantly as the thickness is further reduced to 5 nm. This may be caused by quantum tunneling-assisted leakage of carriers and the deterioration in crystal quality, which lead to increased non-radiative losses [77]. Therefore, designing extremely thin QB samples requires fine interface quality control to meet theoretical expectations.…”

Section: Mitigate the Qcse Effectmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang¹,

Xu²,

Kang³

et al. 2023

Preprint

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GaN-based micro-size light-emitting diodes (µLEDs) have a number of appealing and distinctive benefits for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, less self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is the serious barrier for applications of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as well as the optimization techniques for improving the EQE of µLEDs.

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“…The observed decreased PL intensity (i.e., corresponding to the decreased radiative recombination) is essentially due to the modified charge−transfer dynamics in the system (which is depicted in Figure 6(d)). 43,44 It can be proposed that during the recombination process the excited charge carriers in TiO 2 get transferred to the CB (conduction band) of Fe 3 O 4 in the Fe 3 O 4 @TiO 2 system; however, in the cases of Ag−Fe 3 O 4 @TiO 2 nanocomposites, the electrons possibly get transferred to the CB of both Fe 3 O 4 and Ag nanoparticles, where they trap the electrons and delay their recombination possibilities. It is well known that the reduced recombination process essentially supports the improved photocatalytic reactions by extending the lifetime of the excited charge carriers by making them available in the CB of the photocatalyst for prolonged photocatalytic redox reactions.…”

Section: Morphology Analysismentioning

confidence: 99%

Insights into the Photocatalytic Memory Effect of Magneto-Plasmonic Ag–Fe₃O₄@TiO₂ Ternary Nanocomposites for Dye Degradation and H₂ Production under Light and Dark Conditions

et al. 2022

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This study explores the preparation of Ag plasmons-sensitized magnetic-Fe 3 O 4 integrated TiO 2 (Ag−Fe 3 O 4 @TiO 2 ) ternary nanocomposites and their defectinduced electron storage properties to exploit their photocatalytic memory effect toward dye degradation and H 2 generation under light and dark conditions. The crystalline phase formation and elemental states of the individual materials and elements in the nanocomposite are analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The existence of Ti and Fe ions with dual oxidation states of Ti 4+/3+ and Fe 3+/2+ , respectively, is observed by XPS, which revealed the presence of defects in the system. The observed red shift along with a distinct plasmonic band (corresponding to metallic Ag nanoparticles) in the UV−visible absorption spectrum and the observed modified radiative recombination emission in the PL spectrum confirmed the plasmon-driven visible light activity along with the improved carrier separation and transfer characteristics in the synthesized ternary composite. Accordingly, the Ag− Fe 3 O 4 @TiO 2 photocatalyst degraded almost 100% of MB (methylene blue) and RhB (rhodamine B) dyes under simulated solar light in 90 min, while it is found to be around 42% and 36% in 60 min under dark conditions, respectively (which is preirradiated for 60 min). Further, it produced H 2 at the rate of 911 μmol g −1 h −1 under light conditions and is decreased to ∼96 μmol g −1 h −1 under dark conditions which is preirradiated for 1 h. However, when the composite is preirradiated for 3 h, it showed a maximum H 2 evolution of 144 μmol g −1 h −1 under dark. Further, the photocurrent and electrochemical impedance under light and dark conditions suggested the mechanism of photocatalytic charge storage and transfer process in the composite. Although the photocatalytic memory effect of the composite is meager toward H 2 production due to the insufficient potential of the stored−released electrons to reduce the protons (2H + ) to H 2 under dark conditions, their degradation efficiency is considerably good.

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Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Cited by 4 publications

References 37 publications

Recent Advances on GaN-Based Micro-LEDs

Recent Advances on GaN-Based Micro-LEDs

Recent Advances on GaN-Based Micro-LEDs

Insights into the Photocatalytic Memory Effect of Magneto-Plasmonic Ag–Fe₃O₄@TiO₂ Ternary Nanocomposites for Dye Degradation and H₂ Production under Light and Dark Conditions

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Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Cited by 4 publications

References 37 publications

Recent Advances on GaN-Based Micro-LEDs

Recent Advances on GaN-Based Micro-LEDs

Recent Advances on GaN-Based Micro-LEDs

Insights into the Photocatalytic Memory Effect of Magneto-Plasmonic Ag–Fe3O4@TiO2 Ternary Nanocomposites for Dye Degradation and H2 Production under Light and Dark Conditions

Contact Info

Product

Resources

About

Insights into the Photocatalytic Memory Effect of Magneto-Plasmonic Ag–Fe₃O₄@TiO₂ Ternary Nanocomposites for Dye Degradation and H₂ Production under Light and Dark Conditions