Improved barrier homogeneity in Pt/Al_0.75Ga_0.25N Schottky barrier diodes by graphene interlayer

Abstract

Pt/Al0.75GaN Schottky barrier diodes (SBDs) with graphene (w/ Gr) and without graphene (w/o Gr) interlayer between metal and semiconductor were fabricated to determine the effects of Gr interlayer on the device electrical characteristics. The temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics were systematically measured and comparably analyzed for both structures. The ideal factor (n) and Schottky barrier height (SBH) were determined by the thermionic emission model and barrier inhomogeneity model. The results revealed that the values of ideal factor varied from 4.25 to 2.5 for w/Gr SBDs and 6.61 to 3.19 for w/o Gr SBDs with a temperature range from 393 K to 433 K. The mean barrier height and standard deviation values were 2.355 eV and 0.266 eV for w/ Gr SBDs, while 2.128 eV and 0.272 eV for w/o Gr SBDs, respectively. The C-V data also showed the enhancement of the SBH for w/ Gr SBDs. The results indicated a higher SBH and more barrier uniform distribution for w/ Gr SBDs compared to w/o Gr SBDs，contributing to an quality improvement of Schottky contact. The insights granted by this research may pave a new pathway for improving the performance of AlGaN SBDs through Gr engineering.

Special issue on wide-bandgap semiconductors and applications

“…They are essentially suitable for various applications targeting low losses and high operating frequencies and temperatures. This special issue evaluates a series of GaN-and AlGaN-based electronic devices proposed by Chinese researchers, such as Schottky barrier diodes (SBDs) [19], metal-oxide-semiconductor field effect transistors (MOSFETs) [20], high electron mobility transistors (HEMTs) [21][22][23][24][25], and so forth.…”

“…Ran et al [19] studied the electrical properties of SBDs with and without graphene interlayer between metal and semiconductor. The inclusion of graphene increased the Schottky barrier height from 1.194 eV to 1.443 eV, as determined by the thermionic emission model and barrier inhomogeneity model.…”

The synthesis of MgO and MgO-graphene nanocomposite materials and their diode and photodiode applications

“…Similar findings were declared in literature reports. For instance; Ran et al [33] prepared Pt/Al 0.75 Ga 0.25 N Schottky diode (SD) with and without graphene interlayer between metal and semiconductor to determine the effect of the graphene interlayer on the device electrical properties. The results revealed that the performance of the AlGaN SD prepared with graphene improved.…”