Recent progress of GaN power devices for automotive applications

Abstract

Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

“…4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in. or more have been prepared and used in the mass production of optoelectronic devices.…”

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

“…1,2 Recently, the application of this material to efficient power electronic devices has attracted interest. 3,4 For this purpose, the device fabrication process will greatly benefit from ion implantation technology. However, the formation of a p-type region on GaN by ion implantation is difficult.…”

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

“…[1][2][3][4][5] However, GaN-based devices are still hounded by several problematic issues, foremost of which is the well-known current collapse. It is widely believed that current collapse is predominantly, if not exclusively, due to charging of traps on the AlGaN surface.…”