The impact of low-temperature annealing on Mg-ion-implanted GaN with a low dosage (1.5×10 11 cm -2 ) has been investigated using MOS diodes. Low-temperature annealing was carried out for Mg-ion-implanted GaN in the temperature range from 400 o C to 700 o C before forming the insulator/semiconductor interface of the tested MOS diodes. Upon annealing, the hysteresis and the slope of the capacitance-voltage (C-V) curves, which were affected by deep levels in the GaN bulk, were changed with the annealing temperature. In particular, the shape of C-V curve was changed by annealing at a temperature as low as 500 o C. The C-V curves were found to be reproducible by a simulation in which the dominant deep levels were assumed to be located at 0.1 eV and 0.7 eV below the conduction band edge.Considering the low recovery temperature and low dosage, the possibility of the existence of simple defects after implantation is discussed.

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

A low power, high speed GaAs 1 K b static RAM has been designed and fabricated, exhibiting 30 rnW power dissipation and 6 ns address access time.The 180 pJ access time-dissipation power product obtained in this work is the smallest in the GaAs I Kb static RAMS that have ever been reported.The fabricated device is constructed by E/D type direct coupled FET logic (DCFL) gates and can operate with a single power supply below 1 V, both for the memory cells and for t h e peripheral circuits.Our GaAs LSI processing technologies, including t h e closely spaced electrode FET fabrication technology, made it possible to achieve a complete (full bit) memory operation.

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