Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

Kamoshida, Ryo; Uetake, K.; Murai, Shunta; Akazawa, Masamichi

doi:10.1109/iciprm.2019.8819158

2019 Compound Semiconductor Week (CSW) 2019

DOI: 10.1109/iciprm.2019.8819158

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Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

Ryo Kamoshida

K. Uetake

Shunta Murai

et al.

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Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures

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