Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar, Joel T.; Yoshida, Shizuo; Tokuda, Hirokuni; Kuzuhara, Masaaki

doi:10.7567/jjap.55.04eg07

Cited by 17 publications

(13 citation statements)

References 31 publications

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“…This structure is usually implemented by inductively-coupled-plasma reactive ion etching [11], [12]. However, device performance is severely degraded [13] by damage caused by UV photons included in plasma discharge in the conventional etching system [14], [15], and there is a possibility of damage to the surface and difficulty in controlling the recess depth. Currently, Samukawa [16] proposed a damage-free neutral beam etching (NBE) technology, where almost electrically uncharged particle and few UV photons used, which suppress the plasma-induced damages at the etched surface (which is severe in plasma etching) effectively.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

Shrestha

Suemitsu

et al. 2019

IEEE Trans. Electron Devices

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with nonrecess and recess gates are simulated by solving a set of drift-diffusion equations for electrostatic potential and electron-hole concentrations with selfheating model. The approach is first calibrated for both HEMT devices with experimentally measured data, to provide the best accuracy of the simulation. Recess gate device suffers from high potential to the channel, increased parasitic resistances, and deep level traps in barrier due to surface roughness. In addition, selective thinning of the barrier and increase parasitic resistance results in 17% reduction on the carrier concentration. The carrier mobility degradation due to surface roughness and electron velocity lessen due to high electric field result shrinkage of current density with considerable shift of the threshold voltage toward positive value. Even though transconductance does not seems to be remarkably changed for 3-nm recess gate, its value increases on deeper recess. This paper reveals that surface roughness is crucial issue that has dominant role behind the low current density in the recess gate structure. The detail physical understanding of the recess technology will be helpful to minimize the performance deterioration of the explored devices.

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Section: Introductionmentioning

confidence: 99%

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

Shrestha

Suemitsu

et al. 2019

IEEE Trans. Electron Devices

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“…Another report described a systematic investigation of the combined effect of O 2 plasma treatment and FP structure on current collapse. 78 …”

Section: Effect Of Field Platementioning

confidence: 99%

“…Interestingly, the device with both FP and O 2 plasma treatment showed the lowest degree of current collapse, indicating the cumulative effect of FP and O 2 plasma treatment approaches in weakening current collapse. Asubar et al explained that the effectiveness of the combined schemes was due to the fact that each scheme dealt with current collapse in a different way 78). While O 2 plasma treatment reduced or eliminated surface trap densities responsible for current collapse, the FP structure modified the driving forces directly affecting the trapping and detrapping processes connected with current collapse [53][54][55][56].…”

mentioning

confidence: 99%

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Kuzuhara

Asubar

Tokuda

2016

Jpn. J. Appl. Phys.

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113

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In this paper, we give an overview of the recent progress in GaN-based high-electron-mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics field. The comprehensive investigation of AlGaN/GaN HEMTs fabricated on a free-standing semi-insulating GaN substrate reveals that an extracted effective lateral breakdown field of approximately 1 MV/cm is likely limited by the premature device breakdown originating from the insufficient structural and electrical quality of GaN buffer layers and/or the GaN substrate itself. The effective lateral breakdown field is increased to 2 MV/cm by using a highly resistive GaN substrate achieved by heavy Fe doping. Various issues relevant to current collapse are also discussed in the latter half of this paper, where a more pronounced reduction in current collapse is achieved by combining two different schemes (i.e., a prepassivation oxygen plasma treatment and a field plate structure) for intensifying the mitigating effect against current collapse. Finally, a novel approach to suppress current collapse is presented by introducing a three-dimensional field plate (3DFP) in AlGaN/GaN HEMTs, and its possibility of realizing true collapse-free operation is described.

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“…GaN is widely used in high-frequency and high-power next-generation devices because of its two-dimensional electron gas (2DEG) concentration, high carrier mobility, low ON resistance, and high breakdown voltage [1][2][3]. GaN has demonstrated increasing potential for a wide range of applications.…”

Section: Introductionmentioning

confidence: 99%

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

et al. 2021

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In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

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Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Cited by 17 publications

References 31 publications

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

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