Recent progress in thin film growth analysis by multichannel spectroscopic ellipsometry

Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling

“…A variety of optical characterization methods such as reflectance and transmittance measurements [44], Fourier transform infrared spectroscopy (FTIR) [45], spectroscopic ellipsometry (SE) [46][47][48][49][50], and electron energy loss spectroscopy (EELS) [51] have been applied to the identification of the microstructure giving rise to the various optical and electronic properties. Among several state-of-the art techniques for optical characterization, spectroscopic ellipsometry (SE) proved to be very influential and advantageous for the last two decades in the semiconductor thin film process control and structural analysis, in general and for amorphous silicon thin films in particular [4,48,[52][53][54][55][56][57][58][59][60].…”

Validiation of Photometric Ellipsometry for Refractive Index and Thickness Measurements

“…The accuracy of measurements can be enhanced by employing spectroscopic ellipsometers with a wide range of wavelengths [18][19][20]. For our single wavelength setup, systematic errors may yet be reduced by design optimization and changes in optical instruments as shown in the other system [18].…”

Study of planar waveguide structure of He+ ion-implanted Sn2P2S6 crystal with multiple-angle-of-incidence ellipsometry technique

“…The distortions are caused by a presence of surface layer (SL) associated with the mechanical polishing process [15,16] the case of the layer thicknesses, here the subscripts correspond to the sequence numbers of layers and, in particular, the upper layer (the air) is denoted by the subscript 'zero'). Using the ellipsometric data obtained for the implanted surface in the two orthogonal incidence planes and the calculation procedure described above (see Eqs.…”