Study of planar waveguide structure of He+ ion-implanted Sn2P2S6 crystal with multiple-angle-of-incidence ellipsometry technique

Abstract

In the present work ion-implanted three-layer single-mode waveguide structure in Sn 2 P 2 S 6 crystals is obtained. The parameters of this structure are experimentally studied with the ellipsometric technique and simulated using the inverse ellipsometric problem approach. The parameters of all the layers are derived. It is found that a single-mode guiding regime can be reached for the light wavelengths belonging to the spectral region of transparency ( 530 nm 1279.9 nm    ). We demonstrate advantages of the ellipsometric method applied for detecting the changes occurring in the Sn 2 P 2 S 6 crystal structure due to He + ion implantation.