Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling

Gupta, Sanju; Morell, Gerardo; Weiner, Brad R.

doi:10.1016/j.jnoncrysol.2004.07.008

Cited by 13 publications

(4 citation statements)

References 86 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…XRD results are shown in Fig. 5b, showing also the peak assignment [29,30] -compare to Fig. 5a, and once again confirming that diamond was obtained.…”

Section: Hfcvd Synthesis Of Dtf From a Mixture Of Paraffinssupporting

confidence: 79%

See 1 more Smart Citation

Thin film deposition of diamond using normal paraffins as source of diamond nucleation centers

Ershova¹,

Eizenbraun²

2012

Materials Research Bulletin

View full text Add to dashboard Cite

“…XRD results are shown in Fig. 5b, showing also the peak assignment [29,30] -compare to Fig. 5a, and once again confirming that diamond was obtained.…”

Section: Hfcvd Synthesis Of Dtf From a Mixture Of Paraffinssupporting

confidence: 79%

“…Their complex composition, however, may be detrimental in such applications as microelectronics. A variety of additional methods of DTF deposition on surfaces of different chemical nature have also been reported earlier [22][23][24][25][26][27][28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Thin film deposition of diamond using normal paraffins as source of diamond nucleation centers

Ershova¹,

Eizenbraun²

2012

Materials Research Bulletin

View full text Add to dashboard Cite

“…These films deposited under a pressure of 120 mTorr with a 5 cm wire to substrate spacing and 300 nm thickness, have an rms roughness and lateral correlation length which generally increase with substrate temperature at each dilution. This is in contrast to results for both crystalline and amorphous Si seen by molecular beam epitaxy [7] and plasmaenhanced CVD (PECVD) [8] and is more akin to the increase in surface roughness with increasing substrate temperature seen in HWCVD grown amorphous silicon [9]. If we assume that the H coverage prevents contaminants such as C and O from depositing onto the surface, but does allow Si to deposit, then at higher substrate temperatures increased hydrogen desorption leads to higher contaminant incorporation [2,10], which would increase the surface roughness with increasing substrate temperature [10][11][12].…”

Section: Surface Roughness and Evolutioncontrasting

confidence: 78%

Surface Evolution During Low Temperature Epitaxial Silicon Growth by Hot-Wire Chemical Vapor Deposition: Structural and Electronic Properties

Richardson

Park

Atwater

2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

View full text Add to dashboard Cite

We report the surface and structural evolution of hotwire chemical vapor deposited (HWCVD) crystalline Si thin films with temperature, thickness, and hydrogen dilution and the resulting growth regimes and electronic properties. We focus on a low silane partial pressure regime that leads to epitaxial growth with a polycrystalline, rather than an amorphous transition. Using scanning electron microscopy and atomic force microscopy, we find the relationship between the deposition conditions and the evolution of the surface roughness. Increasing the hydrogen dilution changes the kinetic growth regime from growth predominantly from the wire to shadow-dominated etch and finally to a regime dominated by desorption and re-deposition of growth species. Transitions between these kinetic regimes are the dominant factors governing the epitaxial-polycrystalline transition in low temperature HWCVD growth along with their electronic properties.

show abstract

“…This is in contrast to results for both crystalline and amorphous Si seen by molecular beam epitaxy 20 and plasma-enhanced CVD ͑PECVD͒ 2 and is more akin to the increase in surface roughness with increasing substrate temperature seen in HWCVD grown amorphous silicon. 28 If we assume as in Mason 7 and Richardson et al 17 that H coverage prevents contaminants, such as C and O, from depositing onto the surface, but does allow Si to deposit, then at higher substrate temperatures increased hydrogen desorption leads to higher contaminant incorporation, which would increase the surface roughness with increasing substrate temperature. 13,17,29 Moreover, given that the H coverage of the Si͑100͒ surface at high H dilutions is large and temperature independent below 300°C, 30 then as we lower the substrate temperature from 270°C to 230°C, we suggest that film growth becomes surface mobility limited and there is an increase in the film roughness once more.…”

Section: A Thin Film Structure and Crystallinitymentioning

confidence: 96%

Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

2006

View full text Add to dashboard Cite

We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition ͑HWCVD͒. Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and ͑i͒ the substrate temperature ͑230-350°C͒ and ͑ii͒ the hydrogen dilution ratio ͑H 2 / SiH 4 =0-480͒. The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species.

show abstract

Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling

Cited by 13 publications

References 86 publications

Thin film deposition of diamond using normal paraffins as source of diamond nucleation centers

Thin film deposition of diamond using normal paraffins as source of diamond nucleation centers

Surface Evolution During Low Temperature Epitaxial Silicon Growth by Hot-Wire Chemical Vapor Deposition: Structural and Electronic Properties

Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

Contact Info

Product

Resources

About