Recent Progress and Applications of HfO₂-Based Ferroelectric Memory

Abstract

The discovery of ferroelectricity in hafnium oxide (HfO 2 ) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO 2 -based ferroelectrics.

Ferroelectric ZrO2 phases from infrared spectroscopy

“…Ferroelectric thin films of HfO 2 and ZrO 2 have recently garnered considerable attention due to their potential applications in various fields such as nonvolatile memories, [1][2][3][4][5] ferroelectric field-effect transistors, [6][7][8] energy storage, [9][10][11] negative capacitance, [12][13][14] and tunnel junctions. 15,16 HfO 2 and ZrO 2 were also considered for nonlinear optical applications, as they are compatible with silicon photonics.…”

Physics-Based Modeling of Ferroelectric Hysteresis for Ceramic Capacitors in Inductively Coupled Microstimulators

“…However, there exist approaches that attempt to turn this nonlinearity into a benefit [27][28][29][30]. The most important application for ferroelectric materials is certainly in memory devices, such as ferroelectric random-access memories [31]. The potential use of ferroelectric materials in various applications has led to an increased need for simulation models.…”

A Ferroelectric Differential Bit Cell Based Multiple-Time Programmable Physical Unclonable Function (PUF) For IoT Devices Security

“…The requirement of high-density and high-performance memory cells has become essential due to big data, neural network training, IoT, etc [2]. Emerging memories [3], [4] like FeRAM (Ferroelectric-RAM) [5], ReRAM (Resistive-RAM) [6], STT-MRAM (Spin-transfer torque Magnetic-RAM)…”