Recent application of silicon carbide to high power microwave

Morse, A.W.; Esker, P.M.; Sriram, S.; Hawkins, Jack; Chen, L.S.; Ostop, J.; Smith, T.J.; Davis, C.D.; Barron, R.R.; Clarke, R.C.; Siergiej, R.R.; Brandt, C.D.

doi:10.1109/mwsym.1997.604519

Cited by 8 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A transmitter module for the UHF band has been already fabricated, and a peak output of 1 kW was demonstrated. 26) In addition, Sriram et al performed a lifetime test at a junction temperature of 240 C using an SiC MESFET, and they reported a linear gain degradation of 0.3 dB and a saturation power degradation of 0.4 dB even after 700 h operation, which means that the device reliability does not have any problem. 27) Besides these types of devices, the fabrication of an impact ionization avalanche transit-time (IMPATT) diode was also reported with a peak output power of 1.8 W (11.8 GHz), aiming at applications in the millimeterwave region.…”

Section: High Power Hf Devices 511 Silicon Carbidementioning

confidence: 99%

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Okumura

2006

Jpn. J. Appl. Phys.

296

176

View full text Add to dashboard Cite

High-power device technology is a key technological factor for wireless communication, which is one of the information network infrastructures in the 21st century, as well as power electronics innovation, which contributes considerably to solving the energy saving problem in the future energy network. Widegap semiconductors, such as SiC and GaN, are strongly expected as high-power high-frequency devices and high-power switching devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-power devices are reviewed, in the context of applications in wireless communication and power electronics.

show abstract

Section: High Power Hf Devices 511 Silicon Carbidementioning

confidence: 99%

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Okumura

2006

Jpn. J. Appl. Phys.

296

176

View full text Add to dashboard Cite

show abstract

“…Silicon carbide physical properties, as high thermal conductivity, high breakdown electric field and high electron velocity make it attractive for high power RF and microwave applications [1,2]. In this paper, we report on the electrical characterisation of MESFET's designed and fabricated at Thomson-LCR and their use in communication systems.…”

Section: Introductionmentioning

confidence: 99%