Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Okumura, Hajime

doi:10.1143/jjap.45.7565

Cited by 295 publications

(191 citation statements)

References 172 publications

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“…While keeping the merits of conventional Schottky-gate-based HFETs, i.e., a high density of two-dimensional electron gas ͑2DEG͒ at the AlGaN/GaN interface, high cutoff and maximum frequencies, and the thermal and chemical stability of AlGaN and GaN, MISHFETs offer many advantages over HFETs, such as lower gate leakage current, higher breakdown voltage, better thermal stability of the gate, mitigation of current collapse, a wider range of gate voltage sweep, and higher maximum drain current and output power. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] These features are crucial for applications in high-power, high-temperature electronics, 7,17 particularly to realize low on-resistance and normally off highpower FETs. 15,18 Although the standard high frequency capacitancevoltage ͑C-V͒ measurement at room temperature ͑RT͒ is usually done on metal/insulator/semiconductor heterostructure ͑MISH͒ capacitors and/or metal/semiconductor heterostructure ͑MSH͒ Schottky diodes before the fabrication and characterization of the MISHFET devices, the C-V data are often used only to estimate the thicknesses of the insulator film and/or the AlGaN layer 1,4,12,16,19 or to calculate the 2DEG density.…”

Section: Introductionmentioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

179

141

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The impact of states at the insulator/AlGaN interface on the capacitance-voltage ͑C-V͒ characteristics of a metal/insulator/AlGaN/GaN heterostructure ͑MISH͒ capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states. A parallel shift of the theoretical C-V curves, instead of the typical change in their slope, was found for a MISH device with a 25-nm-thick AlGaN layer when the SiN x / AlGaN interface state density D it ͑E͒ was increased. We attribute this behavior to the position of the Fermi level at the SiN x / AlGaN interface below the AlGaN valence band maximum when the gate bias is near the threshold voltage and to the insensitivity of the deep interface traps to the gate voltage due to a low emission rate. A typical stretch out of the theoretical C-V curve was obtained only for a MISH structure with a very thin AlGaN layer at 300°C. We analyzed the experimental C-V characteristics from a SiN x / Al 2 O 3 / AlGaN/ GaN structure measured at room temperature and 300°C, and extracted a part of D it ͑E͒. The relatively low D it ͑ϳ10 11 eV −1 cm −2 ͒ in the upper bandgap indicates that the SiN x / Al 2 O 3 bilayer is applicable as a gate insulator and as an AlGaN surface passivant in high-temperature, high-power AlGaN/GaN-based devices.

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Section: Introductionmentioning

confidence: 99%

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Miczek

Mizue

Hashizume

et al. 2008

Journal of Applied Physics

179

141

View full text Add to dashboard Cite

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“…Moreover, they permit the operation of devices at higher voltages, temperatures, and frequencies, 12 making it possible to reduce volume and weight in a wide range of applications. This could lead to large energy savings in industrial and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and help integrate renewable energy into the electric grid.…”

Section: Applications and Fi Gures Of Meritmentioning

confidence: 99%

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

et al. 2015

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IntroductionPower electronics is the branch of electronics specifi cally dealing with collecting, delivering, and storing energy, including general and local/commodity energy supplies, by conversion and control of electrical power.1 Specifi c applications range from power supply systems to motor vehicle drives, 2 photovoltaic and fuel cell converters, inverters, and high-frequency heating, 3 among many others. The impact of power electronics has already been signifi cant and is anticipated to be even more so in the future for effi cient energy production and management.As in most other electronics areas, silicon also has been the predominant semiconductor in power electronics to date. However, with wide bandgap materials power electronic components are faster, smaller, more effi cient, and more reliable than their Si-based counterparts. Moreover, they permit the operation of devices at higher voltages, temperatures, and frequencies, 4 making it possible to reduce volume and weight in a wide range of applications. This could lead to large energy savings in industrial and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and integrate renewable energy into the electric grid.The power electronics market as a whole was about $20 billion in 2012, and power electronics will remain one of the most attractive branches of the semiconductor industry over the next decade. 5 The latest power electronics market forecasts 6 predict an increase of 60% for low-voltage technologies (below 900 V) by the year 2020, accompanied by an approximately 100% market increase for medium (1.2-1.7 kV) and high voltage (2 kV and above) technologies. This implies that the largest market increase in this sector over the next decade (medium and high voltage) will rely on semiconductor technologies beyond silicon (also see article by Okumura in this issue). This can be likened to a second revolution, equivalent to the introduction of large scale fabrication of silicon complementary metal oxide semiconductor (CMOS) technology, which led to the commoditization of electronics and formed the basis of our modern technological era. The power electronics revolution could be setting the basis for a world centered on greener technologies: improved energy conversion effi ciencies, faster switching, and more compact, lighter systems with better thermal management and tolerance will have tremendous impact on industrialization and energy systems, encompassing energy savings, renewable energy systems, and Greener technologies for more effi cient power generation, distribution, and delivery in sectors ranging from transportation and generic energy supply to telecommunications are quickly expanding in response to the challenge of climate change. Power electronics is at the center of this fast development. As the effi ciency and resiliency requirements for such technologies can no longer be met by silicon, the research, development, and industrial implementation of wide bandgap semiconductors such as gallium nitride (GaN) and sil...

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“…These requirements have led to great interest in power devices based on wide gap semiconductors such as GaN and SiC [1] [2] [3]. The main advantage of wide gap semiconductors is their very high electric field capability.…”

Section: Introductionmentioning

confidence: 99%

Comparison between SiC- and Si-Based Inverters for Photovoltaic Power Generation Systems

Ando¹,

Shirahata²,

Oku³

et al. 2017

JPEE

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100-W class power storage systems were developed, which comprised spherical Si solar cells, a maximum power point tracking charge controller, a lithium-ion battery, and one of two different types of direct current (DC)-alternating current (AC) converters. One inverter used SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) as switching devices while the other used Si MOSFETs. In these 100-W class inverters, the ON resistance was considered to have little influence on the efficiency. Nevertheless, the SiC-based inverter exhibited an approximately 3% higher DC-AC conversion efficiency than the Si-based inverter. Power loss analysis indicated that the higher efficiency resulted predominantly from lower switching and reverse recovery losses in the SiC MOSFETs compared with in the Si MOSFETs.

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Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Cited by 295 publications

References 172 publications

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

Comparison between SiC- and Si-Based Inverters for Photovoltaic Power Generation Systems

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