Recent advances in electron-beam lithography for the high-volume production of VLSI devices

Pfeiffer, H. C.

doi:10.1109/t-ed.1979.19475

Cited by 94 publications

(12 citation statements)

References 14 publications

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“…For example, consider a shaped-beam lithography system employing Koehler-illumination, as described by Pfeiffer (1979) or Moore et al (1981). The shaping-apertures, located in the upper part of the column, are imaged down to the target.…”

Section: General Aspectsmentioning

confidence: 99%

Coulomb interactions in particle beams

Jansen¹

1988

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

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A comprehensive theory has been developed to describe all manifestations of Coulomb interactions between charged particles in low- and medium-density nonrelativistic beams, e.g., as found in electron beam pattern generators and scanning electron microscopes. A survey is given of the analytical prescriptions for the calculation of the Boersch effect, trajectory displacement effect, and space-charge effect occurring in the drift space of a column. The theory is applied to the IBM EL3 and the Perkin–Elmer aeble 150 shaped spot lithography machines. The results are in close agreement with Monte Carlo simulations as well as the available experimental data.

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Section: General Aspectsmentioning

confidence: 99%

Coulomb interactions in particle beams

Jansen¹

1988

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

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“…lithography [5]. In CP, a character represents some complex pattern within an area of several square microns that can be projected in just one shot (as in Fig.…”

Section: Introductionmentioning

confidence: 99%

E-Beam Lithography Character and Stencil Co-Optimization

Mak

Chu

2014

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-Electron-beam maskless lithography is being actively explored by the semiconductor industry for chip production in the sub-22nm regime. Character projection allows in one ebeam shot the printing of complex pattern rather than merely a single rectangle or triangle as in variable-shaped beam projection. However, those circuit patterns that do not match any character on the stencil still have to be written by variable-shaped beam projection. We investigate a new problem of character and stencil co-optimization with blank space sharing between characters so as to minimize the total number of shots required for printing a circuit. We exploit the fact that the blank spaces on the sides of a character can be adjusted by moving the pattern to be printed within its projection region to facilitate blank space sharing so as to pack more characters into the stencil. Even though the co-optimization problem is shown to be NP-complete, we are able to design an elegant approximation algorithm, CASCO. Experiments confirm that the solutions by CASCO are nearly optimal. Compared to the published state of the art, CASCO reduces the shot count by 1.59× while it is also orders of magnitude faster.

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“…Electron beam direct writing (EBDW) is a solution to fabricating small-lot ICs at a cheap cost. The EBDW can draw patterns onto silicon wafers masklessly or quasi-masklessly (Inanami, 2000;Pfeiffer, 1979). The throughput of the conventional EBDW equipment which adopts the variable shaped beam (VSB) method (Pfeiffer, 1978) is, however, extremely low.…”

Section: Introductionmentioning

confidence: 99%

Character Projection Lithography for Application-Specific Integrated Circuits

Sugihara¹

2011

Recent Advances in Nanofabrication Techniques and Applications

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Recent advances in electron-beam lithography for the high-volume production of VLSI devices

Cited by 94 publications

References 14 publications

Coulomb interactions in particle beams

Coulomb interactions in particle beams

E-Beam Lithography Character and Stencil Co-Optimization

Character Projection Lithography for Application-Specific Integrated Circuits

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