Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review

Tan, Aik Kwan; Hamzah, Nur Atiqah; Ahmad, M.A.; Ng, Sha Shiong; Hassan, Z.

doi:10.1016/j.mssp.2022.106545

Cited by 30 publications

(12 citation statements)

References 121 publications

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“…MOCVD of InN and related materials has traditionally been performed using trimethylindium or triethlyindium and ammonia precursors but with more inert carrier gases (such as nitrogen) than hydrogen in the temperature range from 550 to 800 °C and at pressures between 75 and 500 Torr on sapphire or silicon substrates. , The use of nitrogen instead of hydrogen has been shown to improve growth rates due to the reduced reaction of hydrogen with indium on the surface, resulting in volatile indium hydride products. However, the low growth temperatures, necessitated by the low dissociation temperature of InN and high desorption rate of indium, present a challenge for growth rates by MOCVD as they present low ammonia dissociation rates.…”

Section: Brief Overview Of Thin Film Deposition Techniques For Innmentioning

confidence: 99%

Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys

Pedersen,

Hsu,

Nepal

et al. 2023

Crystal Growth & Design

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Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility, making it suitable for IR-range optoelectronics and high-frequency transistors. However, the development of InN-based electronics is hampered by the metastable nature of InN. The decomposition temperature of InN is lower than the required growth temperature for most crystal growth techniques. Here, we discuss growth of InN films and epitaxial layers by atomic layer deposition (ALD), a growth technique based on self-limiting surface chemical reactions and, thus, inherently a low-temperature technique. We describe the current state of the art in ALD of InN and InN-based ternary alloys with GaN and AlN, and we contrast this to other growth technologies for these materials. We believe that ALD will be the enabling technology for realizing the promise of InN-based electronics.

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Section: Brief Overview Of Thin Film Deposition Techniques For Innmentioning

confidence: 99%

Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys

Pedersen,

Hsu,

Nepal

et al. 2023

Crystal Growth & Design

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“…The incline in In price in the mid-2000s can be related to the high ITO demand and the advent of InGaN (approx. in 2005), a promising alloy for optoelectronic devices, [104] such as solar cells and (blue/green) light emitting diodes, due to its tunable bandgap (compare Figure 13a and 13b).…”

Section: The Advent Of CD In and Ga -Towards Room Temperature Liquid ...mentioning

confidence: 99%

A Short History of Fusible Metals and Alloys – Towards Room Temperature Liquid Metals

et al. 2022

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Liquid metals are a class of materials with a millennia-long history, albeit until 200 years ago, mostly centered on mercurybased applications. The knowledge of mercury's toxicity and the discovery of it's bioaccumulation and biomagnification in the late 20 th century resulted in phasing out mercury for copious application. Lead-based, bismuth-based, and sodiumbased technology has partially replaced mercury, but due to toxicity or reactivity issues, replacements for lead and sodium are sought. The discovery of indium and, especially, gallium has allowed for the third generation of alloys with a melting point close to room temperature. This review gives a comprehensive overview of the technological developments of fusible and liquid metals, i. e., metals and alloys with melting points below ca. 250 °C, from the early days to current research and industrial application. Special emphasis is focused on important steppingstones and recent developments of gallium-based alloys as well as how they could be used for future applications.

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“…Owing to a tunable direct bandgap from 0.67 to 3.42 eV at 300 K, which is across the entire visible range, the InGaN alloy is a promising semiconductor for many optoelectronic applications such as light emitting diodes (LEDs), laser diodes (LDs), and solar cells. Furthermore, InGaN-based LEDs are attractive for the next generation of displays by micro-LED chips, which require high-performance LEDs in the three primary colors: red, green, and blue. − The InGaN-based LEDs with a longer emitting wavelength are obtained by increasing In composition. However, the external quantum efficiency (EQE) of InGaN quantum wells (QWs) abruptly decreases with higher In content.…”

Section: Introductionmentioning

confidence: 99%

“…The main reason for such a low efficiency is the difficulty in growing high-quality InGaN QWs with high-In-content due to low-temperature growth and lattice mismatch. ,,, It has been demonstrated that InN has the least thermal stability among the III-nitride semiconductors and can easily decompose at 470 °C . Thus, the growth temperature of the high-In-content InGaN film is lower than that of GaN.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Origin of High Efficiency in Long-Wavelength InGaN-Based LEDs on Si Substrates

Zhu

Xiong

2023

J. Phys. Chem. C

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The indium gallium nitride (InGaN)- based micro-LEDs are attractive for the next generation of displays. However, the low efficiency of InGaN-based red LEDs is the bottleneck for micro-LED development. For decades, tremendous efforts have been made to design and optimize different kinds of substrates to improve the quality of InGaN quantum wells. In this study, we evaluate the effect of substrate-induced biaxial strains on the behaviors of a single In atom on the GaN (0001) surface by employing first-principles calculations. We find that applying a slight tensile strain can further strengthen In adsorption compared with reducing the compressive strain, while the In atom exhibits relatively faster mobility under compressive strains. Additionally, the calculations of In incorporation in the GaN surface reproduced the composition-pulling effect and confirmed that tensile strain promotes the In incorporation. Furthermore, by comparing the thermodynamics of strained InGaN alloys, we conclude that applying the substrate with a larger lattice constant can stabilize the InGaN system and suppress the phase separation. This study not only clarifies the significant effect of the substrate-induced biaxial strain on InGaN quality but also establishes essential guidelines for optimizing growth conditions to improve the performance of high-In-content InGaN films.

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Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review

Cited by 30 publications

References 121 publications

Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys

Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys

A Short History of Fusible Metals and Alloys – Towards Room Temperature Liquid Metals

Thermodynamic Origin of High Efficiency in Long-Wavelength InGaN-Based LEDs on Si Substrates

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